Determination of the charge of migrating impurities from electrodiffusion profiles: The system a-As2Se3:Cu

Nebauer, E.; Süptitz, P.; Willert, I.

doi:10.1002/pssa.2210430211

Cited by 11 publications

(2 citation statements)

References 12 publications

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“…Intercalation reactions are, by definition, reversible. Electromigration experiments with Ag tracers in glassy As,S, and As,Se, demonstrated the possibility that the regions doped with ions can he pulled through the glass by the action of electric fields applied [27,28]. These experiments proved already the possibility to withdraw the ions from the intercalation product after intercalation and, hence, demonstrated reversibility.…”

Section: Identification Of the Solid State Reaction As An Intercalatimentioning

confidence: 99%

A new interpretation of the photodoping effect in amorphous As- and Ge-chalcogenides

Kluge

1987

Phys. Stat. Sol. (a)

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Photodoping is considered as a radiation-enhanced solid state reaction. The reaction kinetics is governed by two physical processes: (i) The generation of electrons and silver (copper) ions a t the Schottky-barrier originated at the metal-chalcogenide interface and (ii) a transport of the electrons and the metal ions through the amorphous reaction product layer silver-( copper-) chalcogenide. The formation of that compound is a three-dimensional intercalation reaction. The intercalation product possesses a high ionic conductivity after reaching a percolation threshold concentration. The percolation mechanism is responsible for the occurrance of a step-like doping profile. Both processes (i) and (ii) are stimulated by absorption of light. Light absorption a t the Schottky-barrier generates electrons and metal ions. The light absorption within the bulk of the doped chalcogenide supplies free photoelectrons that have to maintain charge neutrality during cation migration and for insertion of the cations into the amorphous network. The insertion is based on the capability of the chalcogens to form C, centres and the appearance of CTMf (M: Ag, Cn) ionic bond units within the amorphous chalcogenide (9 + e-+ M+ -CYMf). A quadrupolar deformibility of Ag+ and Cu+ causes the high ionic mobility of these species. Die Photodotierung wird ale strahlungsbeschleunigte Festkorperreaktion betrachtet. Zwei physikalische Prozesse bestimmen die Reaktionskinetik: (i) Die Generation von Elektronen und Silber-(Kupfer-)Ionen an der Schottky-Barriere, die sich am Metall-Halbleiter-tfbergang ausbildet, und (ii) der Transport der Elektronen und Metallionen durch die amorphe Schicht des Reaktionsproduktes Silber-(Kupfer-)Chalkogenid. Die Bildung dieser Verbindung ist eine dreidimensionalc Interkalationsreaktion. Das Interkalationsprodukt besitzt eine hohe ionische Leitfkhigkeit nach Erreichen einer Perkolationsschwellkonzentration. Der Perkolationsmechanismus wiederum ist fur das Auftreten eines stufenformigen Dotierungsprofils verantwortlich. Beide Prozesse (i) und (ii) werden durch Absorption von Licht, stimuliert. Die Absorption des Lichtes a n der Schottky-Barriere generiert Elektronen und Metallionen. Die Lichtabsorption im Inneren dea dotierten Chalkogenids erzeugt freie Photoelektronen, welche zur Aufrechterhaltung der Ladungsneutralitlt wahrend der Kationenmigration sowie fur den Einbau des Kations in das amorphe Netzwerk benotigt werden. Dieser Einbau beruht auf der Fiihigkeit der Chalkogene CY-Zentren zu bilden und dem Auftreten von G M + (M: Ag, Cu) -Bindungseinheiten im amorphen Chalkogenid (C; + e-+ + MC -c C:M+). Die hohe Ionenbeweglichkeit von Agt und Cut wird durch deren quadrupolare Deformierbarkeit verursacht.

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Section: Identification Of the Solid State Reaction As An Intercalatimentioning

confidence: 99%

A new interpretation of the photodoping effect in amorphous As- and Ge-chalcogenides

Kluge

1987

Phys. Stat. Sol. (a)

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“…By contrast, only a small electric field is required in electromigration experiments, making this approach more efficient and feasible (Mitchell, 1993). As a result, it has widely been used to accelerate the transport of charged ions in various media, such as in clay (Beauwens et al, 2005;Maes et al, 1999Maes et al, , 2002, in semiconductors (Heinemann and Frischat, 1993;Nebauer et al, 1977), in concrete (McGrath and Hooton, 1996) and also in intact rock cores (André et al, 2009;Löfgren and Neretnieks, 2006;Puukko et al, 2018), with different setups.…”

Section: Introductionmentioning

confidence: 99%

Development and application of an advection-dispersion model for data analysis of electromigration experiments with intact rock cores

Meng

Siitari-Kauppi

et al. 2020

Journal of Contaminant Hydrology

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Dopant Electromigration in Semiconductors

Cahen

Chernyak

1997

Advanced Materials

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A doped semiconductor can be viewed as a mixed electronic-ionic conductor, with the dopants as mobile ions. Normally the temperature range where this becomes true is not even close to that where the (0pto)electronic properties of the material are of interest. However, notable exceptions exist and these are reviewed here, with special emphasis on those cases where semiconductivity is preserved when the (mobile) dopant concentration changes and ambipolar behavior can be obtained by dopant mobility. Dopant diffusion and drift are of interest not only in materials such as Si:Li, known from its use in radiation detectors, but also in other semiconductors, ranging from 11-VIs and related compounds, such as (Hg,Cd)Te and CuInSe2 to Ill-Vs and potential high temperature semiconductors, such as diamond. Better understanding of the phenomena is important also because of the implications that it has for device miniaturization, as dopant diffusion and drift put chemical limits to device stability. Such understanding can also make dopant electromigration useful for low-temperature doping. Some basic theory for electric-field-induced dopant migration is given and compared to experiments.

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Determination of the charge of migrating impurities from electrodiffusion profiles: The system a-As2Se3:Cu

Cited by 11 publications

References 12 publications

A new interpretation of the photodoping effect in amorphous As- and Ge-chalcogenides

A new interpretation of the photodoping effect in amorphous As- and Ge-chalcogenides

Development and application of an advection-dispersion model for data analysis of electromigration experiments with intact rock cores

Dopant Electromigration in Semiconductors

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