The electro-thermal Smoothie database model for LDMOS devices

Cuoco, V.; Neo, W.C.E.; Spirito, M.; Yanson, O.; Nenadovic, N.; Vreede, L.C.N. de; Jos, H.F.F.; Burghartz, Joachim N.

doi:10.1109/essder.2004.1356590

Cited by 7 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The tabulated model uses databases that apply functions of smoothing, which consists in reducing the irregularities and singularities of curve. The tabulated model considers realistic conditions of circuit operation and physical complex effects as the auto‐heating [7]. However, the functions of smoothing can present discontinuity problems for high order derivatives.…”

Section: Introductionmentioning

confidence: 99%

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Jouha

Oualkadi

Dherbécourt

et al. 2020

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

In this study, the authors aim at investigating the static electro-thermal behaviour of two new generations of power silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs). The studied devices are commercialised and have a vertical structure. Two approaches are followed: device modelling and physical simulation. An improved compact model based on an accurate method of parameters extraction is introduced. The simulation results obtained with this method perfectly fit the measurements. The parameters extracted precisely from the model (threshold voltage, saturation region transconductance and transverse electric field parameter) are used to accurately analyse the static behaviour of 1200 V Gen 2 and 900 V Gen 3 SiC MOSFETs. Physical simulation is conducted to understand the impact of the temperature and the physical parameters on the threshold voltage and the on-state resistance.

show abstract

Section: Introductionmentioning

confidence: 99%