Journal of Crystal Growth
 1979
DOI: 10.1016/0022-0248(79)90049-6
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The electrical properties of vapour epitaxial indium phosphide grown in the presence of oxygen

Matthew C. Hales1,
J.R. Knight2
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Cited by 9 publications
(1 citation statement)
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“…We know that PCl 3 is easily oxidized. There is already a report on the existence of oxygen in PCl 3 . AsCl 3 is a compound similar to PCl 3 .…”
mentioning
confidence: 99%

Application of the Compatibility Relationship in Seeking a Functional Relationship among Species' Equilibrium Quantities in Complex Systems

Ren1
2000
J. Phys. Chem. B
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0
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“…We know that PCl 3 is easily oxidized. There is already a report on the existence of oxygen in PCl 3 . AsCl 3 is a compound similar to PCl 3 .…”
mentioning
confidence: 99%

Application of the Compatibility Relationship in Seeking a Functional Relationship among Species' Equilibrium Quantities in Complex Systems

Ren1
2000
J. Phys. Chem. B
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A study of vapour phase epitaxy of indium phosphide

Fairhurst
1
,
Lee
2
,
Robertson
3
et al. 1981
J Mater Sci
18
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High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen

Usui
1
,
Watanabe
2
1983
JEM
13
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