A study of vapour phase epitaxy of indium phosphide

Fairhurst, K.M.; Lee, D.; Robertson, D. S.; Parfitt, H. T.; Wilgoss, W. H. E.

doi:10.1007/bf00542747

Cited by 18 publications

(4 citation statements)

References 16 publications

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“…Temperature dependence of growth rate.--It is known that the growth rates of InP and InGaAs vary with temperature (30,32,33,37). Accurate quantification of this variation is, however, complicated by the fact that, even in the absence of temperature gradients, there may be significant variation in growth rate over the area of a wafer due to, for example, nutrient depletion effects in the gas phase (26).…”

Section: Resultsmentioning

confidence: 99%

“…The growth of indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide is feasible in this technology (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16) and multilayer device structures, lattice matched to indium phosphide substrates, can be routinely grown (17)(18)(19)(20)(21)(22)(23). The processes involved in the growth of III-V alloys by VPE have been rather extensively studied, both experimentally and theoretically (2,7,(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40)(41). However, the more detailed studies have generally involved gallium arsenide growth (24)(25)(26)(27)(28)(29).…”

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confidence: 99%

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Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

Buckley

Filipe

Lineman

et al. 1992

J. Electrochem. Soc.

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The availability of automated techniques makes possible very detailed characterization of III-V epitaxial layers. We report results of a study of the growth of indium phosphide and indium gallium arsenide layers on 50 mm diam indium phosphide substrates by trichloride vapor phase epitaxy under a variety of conditions and some effects of reactor parameters on the growth process from a wafer-scale point of view. It is shown that the patterns of variation observed in twodimensional wafer-scale growth rate maps can be correlated with data obtained from series of runs in which conditions were systematically varied. The results are interpreted in terms of the underlying physics and chemistry of the growth process.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

Buckley

Filipe

Lineman

et al. 1992

J. Electrochem. Soc.

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“…InP is one of the important semiconductors for solar cell applications, [1][2][3] either as an important alloy partner with GaP to produce widegap junctions [4,5] or as an independent material for single junction [6,7] cells with an almost ideal direct bandgap of 1.34 eV. Its superior properties include high electron mobility of 5400 cm 2 /V.s [8,9] close to that of other III-V semiconductors such as GaAs (8500 cm 2 /V.s), [10] and low surface recombination velocity (SRV) of ~10 3 cm.s -1 [11,12] compared to GaAs with extremely high SRV of ~10 6 cm.s -1 .…”

Section: Introductionmentioning

confidence: 99%

High‐Quality Indium Phosphide Films and Nano‐Network Grown Using Low‐Cost Metal‐Catalyzed Vapor–Liquid–Solid Method for Photovoltaic Applications

Amiri

Gan

Fan

et al. 2018

Advanced Optical Materials

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Growth of high qualityInP film is demonstrated by directly co-evaporating elemental In and P in a simple low-cost chemical vapor deposition reactor. By exploring the interplay between the metal-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms, we demonstrate the growth of highly stoichiometric InP thin films or nano-networks in a wide range of growth temperature from 560 •C to 720 •C. Photoluminescence (PL) measurements revealed high optical quality of the as-grown InP film with PL bandwidth (~49 meV) comparable to commercial InP wafer (~41 meV). The versatility of this approach is demonstrated through successful growth of thin films on diverse substrates such as silicon, InP, and fused quartz. The effects of catalysts were also studied by comparing growths based on Au-catalyst with In-self-catalyst (without Au). The temperature dependence study of Au-catalyzed growth showed that higher growth temperature results in formation of larger grain sizes and continuous void-free polycrystalline InP films. Preliminary solar cell This article is protected by copyright. All rights reserved.devices were fabricated on a p-type silicon with an ITO contact layer. We believe that our new growth strategy provides a simpler, lower cost (both precursors and substrates) approach for producing high quality InP thin film for the fabrication of high efficiency, low-cost solar cells.

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“…Clearly, reducing the H2 partial pressure will reduce the PHa pressure. This is important since it has been suggested that the growth rate is higher when more PH3 is present due to the fact that InC1 more readily reacts with PH3 than with P2 or P4 (3). [It should be noted that PH3 decomposes rather slowly (4), so that more PH~ is present in the growth zone than is computed from thermodynamic data.…”

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The Thermodynamic Effects of Using an Inert Gas in the Hydride VPE Growth of InP

Jones

1984

J. Electrochem. Soc.

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Substituting an inert gas for hydrogen as the carrier gas in the VPE growth of normalInP and other III–V compounds has the negative effects of reducing the growth rate and the normalHCl concentration in the growth zone. This results from a decrease in the supersaturation for the deposition reaction. These effects are quantified for the hydride growth of normalInP under equilibrium conditions. The thermodynamic growth rate and the equilibrium normalInCl , normalHCl , P2 , P4 , and PH3 partial pressures are computed as a function of the normalinert gas/normalinert gas+H2 pressures.

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A study of vapour phase epitaxy of indium phosphide

Cited by 18 publications

References 16 publications

Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

High‐Quality Indium Phosphide Films and Nano‐Network Grown Using Low‐Cost Metal‐Catalyzed Vapor–Liquid–Solid Method for Photovoltaic Applications

The Thermodynamic Effects of Using an Inert Gas in the Hydride VPE Growth of InP

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