The electrical properties of MIS capacitors with ALN gate dielectrics

Etching behaviour of sputter-deposited aluminium nitride thin films in H3PO4 and KOH solutions

“…Doing so, part of the AlN top layer located at the edges may be detached in an uncontrollable way exposing in this area the silicon substrate. In principal, similar results on the varying presence of the (200) Si peak at different XRD measurements are reported by Adam et al (2000) without giving any explanation. To demonstrate the selective etching behaviour between the (002) plane compared to other crystallographic orientations XRD measurements were performed at AlN films showing either a high c-axis orientation, a mixed phase composition or the absence of the (002) peak before and after an exposure at 80°C in H 3 PO 4 .…”

“…Besides its well-known piezoelectric properties AlN is the material of choice for many application scenarios requiring in addition a good electrical isolation behaviour (Adam et al 2000;Liufu et al 1998), a high chemical inertness and a high surface acoustic wave velocity (Kao et al 2004;Assouar et al 2004). Thin film elements made of AlN are typically used in micromachined devices requiring mechanical excitation during operation, such as Coriolisbased gyroscopes (Günthner et al 2006), or as resonating components in high frequency MEMS (Dubois et al 2003).…”

Role of charge particles irradiation on the deposition of AlN films using plasma focus device

“…However, piezoelectric properties and high acoustic velocity make it suitable for many applications. Moreover, it has high melting point (3273 K) and a band-gap of 6.2 eV at 300 K. Such remarkable properties make it a promising candidate as a material for optoelectronic, high temperature electronic devices, high density capacitors and high power electronics [1][2][3][4][5][6][7]. Deposition of AlN films with various structural and morphological characteristics can be achieved using various deposition techniques.…”

Formation of aluminum nitride thin films as gate dielectrics on Si (100)

“…Overheating of the devices greatly degrades operations and reduces the lifetime of the device. Therefore, it is crucial to develop new insulating materials with good thermal conductivity and high dielectric constants [1][2][3][4][5][6]. Recent experiments indicate that aluminum nitride (AlN) with a W .…”

“…This necessitates the development of new methods for growing AlN at low temperatures. Ion-beam assisted deposition, laser assisted CVD, and plasma-enhanced CVD have reduced growth temperatures [1,[7][8][9][10][11].…”