The effects of two-stage HT-GaN growth with different V/III ratios during 3D–2D transition

Abstract

GaN-based materials are of great interest because of their potential applicability to produce both optoelectronic electronic devices such as high efficiency light emitting diodes (LEDs) [1], laser diodes (LDs) [2], and high-power and high-temperature electronic devices [3]. Such highperformance devices require state-of-the-art growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Although, it is difficult to grow high-quality GaN epilayers due to large lattice and thermal expansion mismatch between the sapphire substrate

Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

“…At lower energy side of this emission, there are small peaks observed at 2.67 eV and 2.58 eV, which is lower than 90 meV from each other's. As the LO-phonon energy of 90 meV in GaN is considered [14], these peaks might be attributed to the phonon replicas of the quantum well. On the other hand, EL emissions observed are at 2.73 eV for both FC LEDs and 2.69 eV for TE LED under 20 mA current injection conditions, which is at a lower energy compared to that of PL emission energy.…”

“…As seen from the PL measurements, there are multiple peaks appearing at energies of 3.47 eV, 3.28 eV, 3.20 eV and 2.76 eV and 2.67 eV. The emission observed at the 3.47 eV belongs to the GaN band edge emission[14],…”

Synthesis and characterization of a triphenylamine-dibenzosuberenone-based conjugated organic material and an investigation of its photovoltaic properties

“…The power conversion efficiency (%) values for the three devices were calculated as 2.54, 2.38, and 2.54 under illumination with a AM1.5, 100 mW/cm 2 lamp using the relation given in our previous study. 33,34 It is well-recognized that the rate of electron transport in a solar cell configuration will impact the power conversion efficiency (%) value of an organic molecule sensitized solar cell device. The achieved high short-circuit current density value for the first device and the third device indicates that effectual injection of electrons occurs into the conduction band (CB) of a counter electrode (TiO 2 ) conduction band from the excited state of the organic molecule.…”

“…The resulting J-V plots are shown in Figure 4. The equations reported in our previous study 33,34 were used to calculate the power conversion efficiency.…”

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN

“…Optoelectronic devices such as LEDs, laser diodes (LDs), solar cells, photodetectors and electronic devices such as high electron mobility transistors (HEMTs), high power pn diodes, Schottky diodes have been produced using III-N materials in recent years [5,6]. GaN material has dominated these areas and has gradually become the focus of attention in scientific studies and industry [7]. Almost all LEDs used for high efficiency lighting in the market are GaN based.…”