The effects of treatment of Si(111) surfaces with NH4F solution on Schottky diode parameters

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

“…Schottky barrier diodes (SBDs) are of the most simple of the MS contact devices [1][2][3][4][5][6][7], a full understanding of the nature of their electrical characteristics is of great technological importance in the electronics industry [7][8][9][10][11][12][13]. Although Schottky interfaces have been well studied for over 50 years, it is only in the past decade that an inhomogeneous contact [5][6][7][8][9][10][11][12][13][14][15] has been considered as an explanation for a voltagedependent barrier height [14][15][16][17][18][19][20][21][22][23][24][25][26].…”

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

“…Schottky contacts based on group III-V semiconductors have been appeared especially in high speed optoelectronic and electronic structures such as solar cells, field-effect transistors, high electron mobility transistors, diodes [3][4][5][6][7]. Schottky diodes (SDs) are the simplest MS contact devices [8][9][10][11][12][13] and so that the understanding of which has great technological importance in the electronics. At this point, since gallium arsenide (GaAs) is one of the most important materials for low-power and high-speed devices, a full understanding of the nature of the electrical characteristics of GaAs based SDs is essential for its application.…”