The effects of thermal annealing in NH3 -ambient on the p-type ZnO films

Jung, Eun Soo; Kim, Hong Seung; Cho, Hyung Koun; Kim, Jihun

doi:10.1016/j.spmi.2007.04.033

Cited by 11 publications

(2 citation statements)

References 13 publications

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“…This behavior could be attributed to the fact that the high temperature nitridation can effectively dissociated the N-H bonds and increase the thermal diffusion rate, promoting nitrogen chemical bonding with Ga [32]. Similar results were found by Jung et al [33].…”

Section: Resultssupporting

confidence: 84%

Wide bandgap tunability of N-alloyed ZnGa₂O₄ thin films

Wang¹,

Liu²,

Wang³

et al. 2021

Semicond. Sci. Technol.

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ZnGa2O4 films with different nitrogen impurity concentrations were deposited using radio frequency magnetron sputtering in an ammonia (NH3)/Ar gas mixture and were post-annealed at different temperatures, ranging from 600 °C to 900 °C, in NH3 atmosphere. The influence of ammonia partial pressure ratio and nitridation temperature on the microstructure, surface morphology, nitrogen doping profile, and optical properties has been investigated. The optical band gap of ZnGa2O4, under in-situ nitrogen-doping, decreases from 4.6 to 4.1 eV but the primitive ZnGa2O4 crystalline structure does not change. On nitridation, the optical band gap gradually decreases from 4.6 to 2.1 eV and the ZnGa2O4 changes into a zinc gallium oxynitride quaternary alloy structure. Secondary ion mass spectrometry analysis revealed that nitrogen atoms were uniformly distributed in the film. The narrowing, by more than 40%, of the optical band gap is attributed to the hybridization of Zn3d and N2p orbits promote p-d repulsion in the top of the valence band, and the formation of hexagonal wurtzite phase.

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Section: Resultssupporting

confidence: 84%

Wide bandgap tunability of N-alloyed ZnGa₂O₄ thin films

Wang¹,

Liu²,

Wang³

et al. 2021

Semicond. Sci. Technol.

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“…ZnO is an attractive material for use in optical devices, solar cells, transparent conducting oxide electrodes, and transparent thin-film transistors because of its wide band gap energy (3.37 eV) and large exciton binding energy (60 meV). 1,2) Although p-type ZnO films have recently been fabricated, [3][4][5] it remains difficult to grow reliable p-type ZnO due to its low dopant solubility and a highly self-compensating process induced by doping. 6) Consequently, p-n junction structures have been fabricated from other p-type materials, including p-GaN, p-SiC, and p-Si.…”

Section: Introductionmentioning

confidence: 99%

Effect of Indium Mole Fraction on the Diode Characteristics of ZnO:In/p-Si(111) Heterojunctions

Lee

Jang

Lee

et al. 2011

Jpn. J. Appl. Phys.

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We investigated the effect of indium (In) doping (0.6, 1, 5, and 10 at. %) on the diode characteristics of heterostructures consisting of In-doped ZnO films on p-Si(111) substrates. In-doped ZnO films were deposited by pulsed laser deposition with an In-doped ZnO target, and heterojunction diodes were fabricated by photolithography and a lift-off method. The electrical properties of ZnO films were altered by In doping, with the In (10 at. %)-doped ZnO film having the highest electron concentration (3.0×1019 cm-3) and lowest resistivity (1.5×10-2 Ω·cm) of the analyzed ZnO films. In doping also had a strong effect on diode characteristics. In particular, In-doped ZnO/p-Si diodes show a very low reverse current density of approximately 2.8×10-6 A/cm2 (In 10 at. %) at -5 V and a high on–off ratio (In 10 at. %) of about 2.5×10-6 at ±5 V. The heterostructure diodes exhibited typical current–voltage characteristics with turn-on voltages in the range 1.2–2.4 V and series resistances in the range 37–99 Ω. The modified diode characteristics may be related to changes in the ZnO film structure induced by In doping. We also discuss the effect on diode characteristics of In doping of ZnO films.

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