The effects of the morphology on the CIGS thin films prepared by CuInGa single precursor

Su, Ce; Ho, Wei-Hao; Lin, Hong-Cheng; Nieh, Cuo-Yo; Liang, Shih-Chang

doi:10.1016/j.solmat.2010.04.072

Cited by 56 publications

(19 citation statements)

References 11 publications

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“…Single-target stability and precursor film reproducibility were evaluated over a series of deposition runs and films were reacted to form Cu(In,Ga)(S,Se)2 for further characterization and device fabrication. Though use of ternary Cu-In-Ga targets with similar atomic composition has been reported [4,5], precursor film morphology and phases observed here differ from previous studies and results have not been reported on precursor film reproducibility and target stability over repeated depositions. Also, in previous work, elemental Se or Se vapor was used to selenize the films whereas in this study, hydride gases were used for chalcopyrite film formation and devices were fabricated.…”

Section: Introductioncontrasting

confidence: 48%

Cu-In-Ga metal precursors sputter deposited from a single ternary target for Cu(lnGa)(SeS)<inf>2</inf> film formation

Huynh

Buchanan

Kim

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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Precursor films used for the growth of Cu(InGa)Se2 were sputter deposited from a single Cu-In-Ga compound target to determine if better control of composition and improved reproducibility compared to precursors deposited from separate sputter targets could be obtained. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize changes in phase and morphology of the ternary sputter target, precursor films, and reacted films over a series of deposition runs and compared with films deposited from two targets. The surface morphology and composition of the target and precursor films were characterized over a range of sputtering conditions and compared to the bulk target composition over time. The precursor films contain Cu9(In1-xGax)4 and In phases with In-rich nodules. The target has a Cu-rich surface composition compared to the bulk that indicates preferential sputtering of In. Cu(InGa)(SeS)2 films were formed by a three-step H2Se/Ar/H2S reaction process.The composition of reacted films using ternary target precursors is comparable to the bulk target composition and good reproducibility is demonstrated. Finally, solar cells fabricated using the reacted films gave a maximum efficiency of 13.4%.

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Section: Introductioncontrasting

confidence: 48%

Cu-In-Ga metal precursors sputter deposited from a single ternary target for Cu(lnGa)(SeS)<inf>2</inf> film formation

Huynh

Buchanan

Kim

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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“…Non-vacuum techniques for fabricating CIGS films are gaining interest since they offer significantly less costly production and easier scalability to fabricate them in large areas [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 ]. Among those, the generation of CIGS thin layers by electrodeposition is particularly attractive due to the relatively low capital cost and high throughput [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Mass Transfer Study on Improved Chemistry for Electrodeposition of Copper Indium Gallium Selenide (CIGS) Compound for Photovoltaics Applications

Saeed

Peña

2021

Nanomaterials

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Copper indium gallium selenium (CIGS) films are attractive for photovoltaic applications due to their high optical absorption coefficient. The generation of CIGS films by electrodeposition is particularly appealing due to the relatively low capital cost and high throughput. Numerous publications address the electrodeposition of CIGS; however, very few recognize the critical significance of transport in affecting the composition and properties of the compound. This study introduces a new electrolyte composition, which is far more dilute than systems that had been previously described, which yields much improved CIGS films. The electrodeposition experiments were carried out on a rotating disk electrode, which provides quantitative control of the transport rates. Experiments with the conventional electrolyte, ten times more concentrated than the new electrolyte proposed here, yielded powdery and non-adherent deposit. By contrast, the new, low concentration electrolyte produced in the preferred potential interval of −0.64 ≤ E ≤ −0.76 V vs. NHE, a smooth and adherent uniform deposit with the desired composition across a broad range of rotation speeds. The effects of mass transport on the deposit are discussed. Sample polarization curves at different electrode rotation rates, obtained in deposition experiments from the high and the low concentration electrolytes, are critically compared. Characterization of the overall efficiency, quantum efficiency, open circuit voltage, short circuit current, dark current, band gap, and the fill factor are reported.

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“…The possible formation mechanism for nanoflowers was proposed according to the foregoing experimental results and relative Refs. [22][23][24][25]. Firstly, since the temperatures reached are certainly high enough to melt indium and Gallium under the solvothermal process, and CuInxGay alloy is formed.…”

Section: Resultsmentioning

confidence: 99%

Preparation of CuIn1−xGaxS2 (x=0.5) flowers consisting of nanoflakes via a solvothermal method

Liang

Zhong

Yang

et al. 2011

Journal of Alloys and Compounds

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The effects of the morphology on the CIGS thin films prepared by CuInGa single precursor

Cited by 56 publications

References 11 publications

Cu-In-Ga metal precursors sputter deposited from a single ternary target for Cu(lnGa)(SeS)<inf>2</inf> film formation

Cu-In-Ga metal precursors sputter deposited from a single ternary target for Cu(lnGa)(SeS)<inf>2</inf> film formation

Mass Transfer Study on Improved Chemistry for Electrodeposition of Copper Indium Gallium Selenide (CIGS) Compound for Photovoltaics Applications

Preparation of CuIn1−xGaxS2 (x=0.5) flowers consisting of nanoflakes via a solvothermal method

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