The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

Yoshitake, Tsuyoshi; Nishiyama, Takashi; Aoki, Hajime; Suizu, Koji; Takahashi, Koji; Nagayama, Kazuaki

doi:10.1016/s0925-9635(98)00348-3

Cited by 22 publications

(7 citation statements)

References 14 publications

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“…It has been reported that superior smoothness can be achieved independent of thickness such that AFM of 0.9 nm thick films remain 0.13 nm in roughness [28]. The dependence of DLC on deposition wavelength is consistent with the reports by others [29,30]. At higher photon energy, lower penetration depth of shorter wavelength laser in the ablation of graphite results in higher ionized energetic species for subplantation growth of high sp 3 content DLC films [31].…”

Section: Dlc Propertiessupporting

confidence: 86%

Parametric Studies of Pulsed Laser Deposition of Indium Tin Oxide and Ultra-thin Diamond-like Carbon for Organic Light-emitting Devices

Tou¹,

Yong²,

Yap³

et al. 2009

Journal of the Optical Society of Korea

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Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at 200℃ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to 2×10 -4 Ω cm while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers.Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+Alq3)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+Alq3)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

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Section: Dlc Propertiessupporting

confidence: 86%

Parametric Studies of Pulsed Laser Deposition of Indium Tin Oxide and Ultra-thin Diamond-like Carbon for Organic Light-emitting Devices

Tou¹,

Yong²,

Yap³

et al. 2009

Journal of the Optical Society of Korea

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“…Systematic study has shown that superior and almost constant roughness of~0.12 nm were achieved in tetrahedral amorphous carbon films with thicknesses from 0.9 nm to 60 nm [9]. The dependence of DLC on deposition wavelength is consistent to the reports by others [10,11]. At higher photon energy, lower penetration depth of shorter wavelength laser in the ablation of graphite results in higher ionized energetic species for subplantation growth of high sp 3 content DLC films [12].…”

Section: Dlc Propertiessupporting

confidence: 84%

Effects of diamond-like carbon in TPD-Alq3 doped PVK organic light-emitting devices

Yap¹,

Yang²,

Yong³

et al. 2009

Diamond and Related Materials

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“…approximately 1.1 eV, which is close to and higher than that obtained by a pulsed laser deposition technique at room temperature. 13,14)…”

Section: Armentioning

confidence: 99%

Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering

Suda¹,

Yukimura

Nakamura

et al. 2006

Jpn. J. Appl. Phys.

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Spark-Plasma-Sintering (SPS) of tungsten carbide and titanium carbonitride nanopowders I Zalite, P Angerer, L G Yu et al.-Phase equilibria in the W-C system and tungsten carbides Aleksei S Kurlov and Aleksandr I Gusev-This content was downloaded from IP address 34.208.6.16 Abstract. An interest in WC1-x cubic tungsten carbide results from its catalytic properties similar to those of platinum group metals and the synergistic effect between WC1-x and Pt in reactions of hydrogen evolution and hydrogen oxidation. However, according to the phase diagram of the W-C system, the cubic phase WC1-x only exists in a narrow range of temperature stability (about 2798-3058 K), which makes it difficult for being obtained. To date, there are different methods for synthesizing tungsten carbide powder with a low content of cubic phase that complicates the study of WC1-x properties. A direct plasma dynamic synthesis is known as one of the promising methods to produce WC1-x. The aim of this work is to find the optimal amount of tungsten precursor to obtain cubic tungsten carbide with a high purity by plasma dynamic method. The synthesized products were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD patterns showed that the main phase was cubic tungsten carbide with negligible content of hexagonal tungsten carbide W2C and pure tungsten W. According to a quantitative analysis of synthesized products, which were obtained using masses of initial tungsten equal to 1.0, 0.7, 0.6 and 0.5 gram, the yield of WC1-x phase was 84, 89, 95 and 92 wt%, respectively. The results of TEM displayed that the synthesized powders consist of crystallites, having the size less than 100 nm (WC1-x), and a carbon matrix. This carbon was not detected in XRD due to its presence as an amorphous phase.

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The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

Cited by 22 publications

References 14 publications

Parametric Studies of Pulsed Laser Deposition of Indium Tin Oxide and Ultra-thin Diamond-like Carbon for Organic Light-emitting Devices

Parametric Studies of Pulsed Laser Deposition of Indium Tin Oxide and Ultra-thin Diamond-like Carbon for Organic Light-emitting Devices

Effects of diamond-like carbon in TPD-Alq3 doped PVK organic light-emitting devices

Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering

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