The effects of solvents on the formation of sol–gel-derived Bi12SiO20 thin films

Veber, Asja; Kunej, Špela; Korošec, Romana Cerc; Suvorov, Danilo

doi:10.1016/j.jeurceramsoc.2010.04.026

Cited by 18 publications

(12 citation statements)

References 14 publications

(11 reference statements)

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“…The stability of each phase depends on different conditions such as temperature, heat treatment and chemical doping [1,2]. Among the phases of bismuth oxide, the γ-bcc phase is of great interest because of its purity and metastability.…”

Section: Introductionmentioning

confidence: 99%

“…Among the phases of bismuth oxide, the γ-bcc phase is of great interest because of its purity and metastability. This compound is formed during the cooling of the fcc δ phase of high stability at high temperatures [2]. In order to stabilize the γ phase, a small amount of other cations is added to form a new compound of type Bi 12 MO 20 of sol to gel consists of three fundamental steps: the preparation of the sun, the gelation of the same, and the elimination of the solvents [7].…”

Section: Introductionmentioning

confidence: 99%

“…Composite materials containing silicates should promote osteogenic performance of osteoblast cells [23]. There are reports available in the literature on the synthesis of Bi 12 SiO 20 thin films using the sol-gel method [2,[24][25][26] but, there are not studies of the biocompatibility properties of BSO films on AISI316L substrates.…”

Section: Introductionmentioning

confidence: 99%

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Biocompatibility of bismuth silicate coatings deposited on 316L stainless steel by sol-gel process

Bautista-Ruiz

Olaya-Flórez

Chaparro

2017

Rev. Fac. Ing. Univ. Antioquia

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Bismuth silicate, (BSO) thin films have been fabricated by sol-gel process.The stable sol was synthesized by using bismuth nitrate (III) pentahydrate and tetraethyl orthosilicate (TEOS). The films were deposited by spin-coating at 1500 rpm on Stainless Steel 316L. The films were characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) besides the measured of the films thickness. This study aimed to evaluate the cell adhesion and cellular proliferation of osteoblast cells on BSO thin films and substrate 316L by MTT assay. It is concluded that the growth of osteoblasts is homogeneous in the surface of the coatings indicating that the medium offered by the films does not present active cytotoxicity and exceed in large number the level of cellular growth compared to Stainless Steel. RESUMEN:Películas delgadas de silicato de bismuto (BSO) se han fabricado mediante el proceso sol-gel. El sol estable se sintetizó utilizando nitrato de bismuto (III) pentahidrato y tetraetil-ortosilicato (TEOS). Las películas fueron depositadas a 1500 rpm mediante la técnica de centrifugado. Los recubrimientos se caracterizaron por microscopía de fuerza atómica (AFM), microscopía electrónica de barrido (SEM), difracción de rayos-X (DRX) y se midió el espesor de las películas. El objetivo de este estudio fue evaluar la adhesión y la proliferación en células de osteoblastos, mediante el ensayo MMT, al incubarse sobre películas BSO en sustratos de 316L. Se concluyó que el crecimiento de los osteoblastos es homogéneo en la superficie de las películas, indicando que el medio ofrecido por los recubrimientos no presenta actividad citotóxica y favorece los niveles de crecimiento celular en comparación con los resultados obtenidos para los sustratos de acero inoxidable.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Biocompatibility of bismuth silicate coatings deposited on 316L stainless steel by sol-gel process

Bautista-Ruiz

Olaya-Flórez

Chaparro

2017

Rev. Fac. Ing. Univ. Antioquia

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“…Sillenite-type crystals with chemical composition Bi 12 MO 20 (M= Si, Ge, Ti) belong to the cubic space group I23 and exhibit piezoelectric, electro-optical, elasto-optical, and photoconductive properties [1][2][3][4][5][6]. The combination of electro-optical and photoconductivity properties results in the so-called photorefractive effect [7,8].…”

Section: Introductionmentioning

confidence: 99%

Atomistic simulation and XAS investigation of Mn induced defects in Bi12TiO20

Rezende

Santos

Jackson

et al. 2016

Journal of Solid State Chemistry

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-This work reports an investigation of the valence and site occupancy of Mn dopants in Bi 12 TiO 20 (BTO: Mn) host using X-ray Absorption (XAS) and atomistic simulation techniques based on energy minimisation. X-ray Absorption Near Edge Structure (XANES) at the Mn K-edges gave typical results for Mn ions with mixed valences of 3+ and 4+. Extended X-ray Absorption Fine Structure (EXAFS) results indicated that Mn ions are probably substituted at Ti sites. Atomistic simulation was performed assuming the incorporation of Mn 2+ , Mn 3+ and Mn 4+ ions at either Bi 3+ or Ti 4+ sites, and the results were compared to XANES and EXAFS measurements. Electrical conductivity for pure and doped samples was used to evaluate the consistency of the proposed model.

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“…Although much work has been done on bulk BSO ceramics, little information is available on thin films. However, BSO thin films were already synthesized using the sol–gel process . Plyaka et al .…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties of Sol–Gel‐Derived Bi₁₂SiO₂₀ Thin Films

2012

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In this paper the dielectric properties of crack‐free, Bi12SiO20 thin films were investigated. The films were prepared on Pt/TiO2/SiO2/Si and corundum substrates using the sol–gel method. The formation of a pure Bi12SiO20 phase was observed at a temperature of 700°C. The Bi12SiO20 thin films, heat treated at 700°C for 1 h, had a dense microstructure with an average roughness (Ra) of 50 nm. The dielectric properties of the film were characterized by using both low‐ and microwave‐frequency measurement techniques. The low‐frequency measurements were conducted with a parallel capacitor configuration. The dielectric constant and dielectric losses were 44 and 7.5 × 10−3, respectively. The thin‐film dielectric properties at the microwave frequency were measured using the split‐post, dielectric resonator method (15 GHz) and the planar capacitor configuration (1–5 GHz). The dielectric constant and the dielectric losses measured at 15 GHz were 40 and 17 × 10−3, respectively, while the dielectric constant and the dielectric losses measured with the planar capacitor configuration were 39 and 65 × 10−3, respectively.

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The effects of solvents on the formation of sol–gel-derived Bi12SiO20 thin films

Cited by 18 publications

References 14 publications

Biocompatibility of bismuth silicate coatings deposited on 316L stainless steel by sol-gel process

Biocompatibility of bismuth silicate coatings deposited on 316L stainless steel by sol-gel process

Atomistic simulation and XAS investigation of Mn induced defects in Bi12TiO20

Dielectric Properties of Sol–Gel‐Derived Bi₁₂SiO₂₀ Thin Films

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The effects of solvents on the formation of sol–gel-derived Bi12SiO20 thin films

Cited by 18 publications

References 14 publications

Biocompatibility of bismuth silicate coatings deposited on 316L stainless steel by sol-gel process

Biocompatibility of bismuth silicate coatings deposited on 316L stainless steel by sol-gel process

Atomistic simulation and XAS investigation of Mn induced defects in Bi12TiO20

Dielectric Properties of Sol–Gel‐Derived Bi12SiO20 Thin Films

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Dielectric Properties of Sol–Gel‐Derived Bi₁₂SiO₂₀ Thin Films