The Effects of Rapid Thermal Annealing on Photoluminescence Properties of Nanostructures Silicon

Abstract

The photoluminescence spectrums (PL) of as-prepared and rapid thermal annealing RTA of nanostructures silicon have been investigated. p-Type porous silicon (psi) fabricated by electrochemical etching method .The (PL) of as-prepared sample, showed top of photoluminescence (PL) peak centered at about 540.9 nm. After the annealing process of nanostructures silicon in temperature 450°c, 600°c and 750°c at annealing time 15 sec, the (PL) peaks shifted,to 743.99nm, 747.49nm and 757.37 nm rspectively . The intensity of( PL) of annealed samples also shown a conspicuous decrease in intensity Compare with as-prepared sample .The intensity reach to (50%),(39%) and (29%)from its intial value whenthe temperature increase 450, 600°c and 750°c rspectively. This behavour is due to the increase in the average skeleton size.

The unrevealed 3D morphological evolution of annealed nanoporous thin films

“…26,27 And high-temperature annealing is a common technique for the preparation of nanostructures, which has an important effect on the surface morphological and optical properties. [28][29][30] The surface tension of the softened silicon causes the morphological change, shrinking or expansion, of nanopores. Based on the experimental observation for the same silicon membrane, the small pores would shrink and eventually disappear, while the large pores expand.…”

“…26,27 And high-temperature annealing is a common technique for the preparation of nanostructures, which has an important effect on the surface morphological and optical properties. 28–30…”