The effects of rapid thermal annealing and microwave annealing on the electrical properties of ZrO2 metal-insulator-metal capacitors

Zhang, Q.X.; Yu, Ge; Gu, Xianyue; Fei, Peng; Man, Luo

doi:10.1016/j.ijleo.2018.11.048

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…However, high temperature annealing still causes thermal damage to devices during RTA. Microwave treatment (MWT) has been studied as an alternative way for heat treatments because MWT does not need to consume high energy and long-time in high temperature [9,10]. In addition, in the case of MWT, it is known that has a low thermal budget [11,12].…”

Section: Introductionmentioning

confidence: 99%

Improved Electrical and Optical Properties of IGZO Transparent Conductive Oxide Due to Microwave Treatment: Application to Silicon Solar Cells

et al. 2022

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The electrical and optical properties of IGZO-based transparent conductive oxide (TCO), fabricated by reactivesputtering, are optimized using post microwave treatment (MWT), not rapid temperature annealing (RTA), for silicon solar cell. Compared to the sheet resistance and transmittance of IGZO-based TCO after RTA and MWT, we observed a transmittance of over 75 % in the visible and near ultraviolet range of 370-1,200 nm in common, while the lower sheet resistance of 15 Ω/□ was obtained, which was 3.5 times lower than that of the RTA sample, which resulted in higher current density in IGZO-based TCO after MWT. On the basis of trap density analysis, it is confirmed that the oxygen vacancy within IGZO-based TCO increased as process and power in MWT, which is the reason for the increase in conductivity. Furthermore, short circuit current density (Jsc) was compared to confirm the applicability in the solar cell, which is one of the fields that IGZO mainly uses as a TCO. Jsc of the IGZO based solar cell annealed in MWT at 400W for 60 s was 19.8 mA/cm 2 . .

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Section: Introductionmentioning

confidence: 99%

Improved Electrical and Optical Properties of IGZO Transparent Conductive Oxide Due to Microwave Treatment: Application to Silicon Solar Cells

et al. 2022

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“…Therefore, a calcination process for eliminating the impurities present and reducing the diameter of the electrospun oxide semiconductor NFs is considered mandatory for improving the electrical and physical properties of the devices based on them [ 14 , 15 ]. Microwave annealing (MWA), which is a fast, cost-effective, and highly efficient method, is expected to find wide use as a next-generation thermal processing technology and is already being used in various fields [ 16 , 17 ]. Nevertheless, there have been few reports of the effects of microwave processing on the calcination of NFs.…”

Section: Introductionmentioning

confidence: 99%

Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Cho¹,

Cho²

2020

Nanomaterials

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We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

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Microwave Effects on Metal–Semiconductor Contact of Heavily Nitrogen-Implanted Silicon

Hsu,

Shen,

Hsu

et al. 2024

IEEE Trans. Electron Devices

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The effects of rapid thermal annealing and microwave annealing on the electrical properties of ZrO2 metal-insulator-metal capacitors

Cited by 3 publications

References 14 publications

Improved Electrical and Optical Properties of IGZO Transparent Conductive Oxide Due to Microwave Treatment: Application to Silicon Solar Cells

Improved Electrical and Optical Properties of IGZO Transparent Conductive Oxide Due to Microwave Treatment: Application to Silicon Solar Cells

Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Microwave Effects on Metal–Semiconductor Contact of Heavily Nitrogen-Implanted Silicon

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