The effects of r.f. power and substrate temperature on the properties of ZnO films

Lin, Su-Shia; Huang, Jen‐How; Lii, Ding-Fwu

doi:10.1016/s0257-8972(03)00665-0

Cited by 83 publications

(40 citation statements)

References 36 publications

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“…The obtained band gap at *3.28-3.26 eV is comparable to the values reported for ZnO thin films deposited by RF [8,11,15,23].…”

Section: Optical Characterizationsupporting

confidence: 84%

“…Several techniques have been used to grow ZnO films, such as pulsed laser deposition [3], DC reactive magnetron sputtering [4,5], atomic layer deposition [6], electron beam evaporation [12], sol-gel [13], and spray pyrolysis [14]. In this context, reactive radio-frequency (RF) magnetron sputtering is an attractive alternative method for growing ZnO films because of the more accurate thickness control and a higher uniformity compared with other thin-film deposition techniques [15,16]. The properties of the ZnO films deposited by RF magnetron sputtering depend on the deposition parameters involved in the growth process, such as the RF power, sputtering gas pressure, gas flow rate, and temperature.…”

Section: Introductionmentioning

confidence: 99%

“…The properties of the ZnO films deposited by RF magnetron sputtering depend on the deposition parameters involved in the growth process, such as the RF power, sputtering gas pressure, gas flow rate, and temperature. By adjusting these processing parameters, ZnO films with properties that are compatible with optical devices may be obtained [8,15,16]. In regard to experimental parameters, post-annealing is a process widely used to improve the crystallinity and to reduce surface roughness of RF-sputtered films [8,[10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

García-Méndez¹,

Bedoya-Calle²,

Segura³

et al. 2015

Appl. Phys. A

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Zinc oxide films were deposited on glass substrates by RF reactive magnetron sputtering and post-annealed in vacuum at 100, 200, and 300 8C. Structural and optical properties of films were obtained using X-ray diffraction and UV-visible spectroscopy. Optical parameters were extracted from transmittance curves using the single-oscillator Drude-Lorentz model. The evolution of the optical and structural properties of films with the annealing process was investigated. The films crystallized into the hexagonal würzite lattice structure, with preferential growth along the c-axis [0002]. The results indicate that the crystalline quality of films improved with annealing, whereas transparency was reduced from 90 to 80 % at 300 8C. With post-annealing, the absorption edge shifted to the red, while the optical band gap decreased from E g ¼ 3:28 to E g ¼ 3:26 eV because of the Burstein-Moss effect. Calculated values of plasma frequency, w p ; fall within the IR range and decrease with temperature, from w p ¼ 5:56 Â 10 14 rad/s (2950 cm À1 ) to w p ¼ 1:1 Â 10 14 rad/s (587 cm À1 ).

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“…The obtained band gap at *3.28-3.26 eV is comparable to the values reported for ZnO thin films deposited by RF [8,11,15,23].…”

Section: Optical Characterizationsupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

García-Méndez¹,

Bedoya-Calle²,

Segura³

et al. 2015

Appl. Phys. A

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“…Band gaps of E g ¼ 3:23eV (d = 300 nm) and E g ¼ 3:27eV (d = 340 nm) were obtained from Tauc curves for pure and Ce-doped films, respectively. Band gap values of $ 3.23-3.26 eV have been previously reported for RF deposited ZnO films (Al-Kuhaili et al 2012;Lin et al 2004;Bouderbala et al 2009;Zhu et al 2011). Optical absorption studies show that the absorption edge of the doped films shifts towards blue region with a widening of the band gap at a higher energy.…”

Section: Characterization Techniquesmentioning

confidence: 75%

“…Several techniques have been used to grow ZnO films, such as pulsed laser deposition (Sachet et al 2013), DC reactive-magnetron sputtering (Suchea et al 2006;Logothetidis et al 2008), atomic layer deposition (Frölich and Wegener 2011), ZnO films deposited by RF magnetron sputtering depend on the deposition parameters involved in the growth process, such as the RF power, sputtering gas pressure, gas flow rate, and temperature. By adjusting these processing parameters, ZnO films with properties that are compatible with optical devices may be obtained (Al-Kuhaili et al 2012;Lin et al 2004;Kim et al 2010b;Kapustianyk et al 2007). Additionally, doping with selective elements can induce changes in the structural, electrical, optical, and electronic properties of ZnO films (Morinaga et al 1997;Kim et al 2010a;Joshi et al 2010).…”

Section: Introductionmentioning

confidence: 99%

The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films

García-Méndez¹,

Segura

Coello

et al. 2015

Opt Quant Electron

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Using X-ray diffraction, UV-Visible spectroscopy, XPS and photoluminescence (PL) measurements, the structural, optical and electronic properties of ZnO and Cedoped ZnO thin films were investigated; the films were deposited on glass substrates by RF reactive-magnetron sputtering and post-annealed at 300 C in an oxygen atmosphere. Under similar deposition conditions, both films crystallized into hexagonal würzite lattice structures. The pure ZnO film exhibited a c-axis preferential orientation, whereas the Cedoped exhibited an a-axis preferential orientation. The films display uniform textured surfaces with columnar-like microstructures. The UV-Vis spectra showed high transparencies of 90 % on average for both films. Band gaps of E g ¼ 3:23 eV and E g ¼ 3:27 eV for pure and Ce-doped film, respectively, were measured. The doped film spectrum was shifted to the blue as a result of the Burstein-Moss effect. The XPS spectra show that the VB edge of the doped film shifts toward lower binding energy, at $ 1.3 eV below E F , while the VB edge of the pure film is located at $ 2.0 eV below E F . Additionally, Ce 3þ and Ce 4þ ions coexist in the ZnO matrix in fractions of $ 70 and $ 30 %, respectively. The PL spectra show that both types of ions induce extra electron states that allow multiple emission peaks in the blue-green region.

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Photostabilization of polycarbonate by ZnO coatings

Moustaghfir

Rivaton

Tomasella

et al. 2004

J of Applied Polymer Sci

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ABSTRACT:The photostability of bisphenol-A polycarbonate (PC) can be increased by depositing zinc oxide (ZnO) coatings onto PC films by radiofrequency (rf) magnetron sputtering using an Ar-O 2 plasma. The photoprotective efficiency increases with the thickness of the ZnO layer and also depends on the sputtering parameters (rf power, total pressure, plasma composition), which control the properties of coatings. The increasing thickness of the deposits is correlated with variations of the density, grain size, and composition. PC samples with ZnO coatings were submitted to artificial accelerated ageing ( Ͼ 300 nm) and the extent of the photodegradation was evaluated by infrared and UVvisible spectroscopies. All the deposition parameters were optimized as a function of the results obtained in photoageing and are described in this article. © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 95: 380 -385, 2005

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The effects of r.f. power and substrate temperature on the properties of ZnO films

Cited by 83 publications

References 36 publications

Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films

Photostabilization of polycarbonate by ZnO coatings

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