The Effects of Preheatings on Axial Oxygen Precipitation Uniformity in Czochralski Silicon Crystals

Chiou, Herng‐Der

doi:10.1149/1.2069476

Cited by 11 publications

(6 citation statements)

References 16 publications

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“…It has been established that the majority of these precipitates can be dissolved and revert to interstitial atoms by subjecting to high temperature furnace annealing cycle [21] or by performing at high temperature rapid thermal annealing [22]. More oxygen recovery in GCz Si than Cz Si wafers at extreme high temperature showed in Fig.…”

Section: Discussionmentioning

confidence: 96%

Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Chen¹,

Yang²,

Li³

et al. 2006

Journal of Crystal Growth

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Section: Discussionmentioning

confidence: 96%

Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Chen¹,

Yang²,

Li³

et al. 2006

Journal of Crystal Growth

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“…11 c There is another way of improving A[Oi] uniformity by using high temperature preheating, such as denuding. 8 In commercial CZ crystals, the seed end contains oxygen precipitates and/or precipitate nuclei. Ie']7 These existing precipitates will grow bigger in the subsequent heat cycles whenever their radii are larger than the critical radius at the heat-treating temperature.…”

Section: Discussionmentioning

confidence: 99%

Improving Axial Oxygen Precipitation Uniformity in CZ Silicon Crystals Using the S‐Curve Concept

Chiou

1994

J. Electrochem. Soc.

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Methods for improving oxygen precipitation uniformity using the concept of the precipitation S-curve/S-band (the relationship between the amount of precipitation, h [Oi], and the initial interstitial oxygen content, [Oi]o) are described. Slugs from four crystals with different axial [Oi]o profiles were annealed under a complementary metal oxide semiconductor thermal cycle to illustrate this technique. A conventional axial [Oi]o profile crystal with a seed end had the highest [Oi]o and the tang end had the lowest [Oi]o resulted in a highest h[Oi] variation. The crystal with the best axial [Oi]o profile for obtaining a uniform A[Oi] profile was a low [Oi]o in the seed end and a higher relatively constant [Oi]o in the middle portion, and highest [Oi]o in the tang end. To design an axial [Oi]o profile for a target uniform value of h[Oi] for a crystal, the S-band of the device process must be obtained first.

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“…Generally, the thermal history of wafer is understood as an in situ annealing of Cz-Si crystals during the solidification in chamber, in which the oxygen interstitials incline to form small grown-in oxygen precipitates [12]. Majority of these precipitates can be dissolved and revert to oxygen interstitials by subjecting to high temperature CFA [13] or by performing at high-temperature RTA [14]. It has also been established that more oxygen precipitation could be generated when the absolute [O i ], actually the oxygen super-saturation, was higher in Cz-Si crystal [15].…”

Section: Methodsmentioning

confidence: 99%