The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

Hsieh, Po Tsung; Chen, Y. C.; Lee, M. S.; Kao, K. C.; Kao, Ming-Cheng; Houng, Mau–Phon

doi:10.1007/s10971-008-1747-7

Cited by 21 publications

(6 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The enhancement in the UV emission is related to a higher stoichiometry of the films, and can be improved by oxygen incorporation through a post-deposition annealing process [15,24,25]. The PL emission observed from the laser-annealed samples, much lower in intensity than the former ones, suggests that the film stoichiometry does not vary with respect to the as-deposited film.…”

Section: Resultsmentioning

confidence: 95%

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Lluscà

López-Vidrier

Lauzurica

et al. 2015

Journal of Luminescence

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 95%

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Lluscà

López-Vidrier

Lauzurica

et al. 2015

Journal of Luminescence

View full text Add to dashboard Cite

“…The similar behavior has been reported earlier for Al-ZnO thin films prepared by spin coating on glass substrates. 15 Thus, the excess aluminum as such or its oxide is perhaps segregating and pinning the grain boundaries and inhibiting growth of ZnO thin films.…”

Section: A Formation Of Oxide Filmsmentioning

confidence: 99%

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

Srivastava

Kumar

2011

AIP Advances

View full text Add to dashboard Cite

Aluminum-doped ZnO thin films of high optical transmittance (∼ 84-100%) and low resistivity (∼ 2.3x10-2 Ωcm) have been prepared on glass substrate by the spin coating and subsequent annealing at 500°C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i) electron concentration following aluminum doping (being trivalent), formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii) carrier mobility

show abstract

“…The main reason of decline in roughness originates from the enhanced grains by annealed in vacuum atmosphere and oxygen. [46][47][48][49] Annealing at 400°C seems to supply sufficient energy to surface atoms to diffuse into the surface vacancies or defects. 48 The smaller surface roughness at thin film annealed in an oxygen environment also reveals larger grain size than the others due to an adequate amount of oxygen atoms in environment.…”

Section: Resultsmentioning

confidence: 99%

The effects of postdeposition annealing conditions on structure and created defects in Zn_0.90Co_0.10O thin films deposited on Si(100) substrate

et al. 2013

View full text Add to dashboard Cite

We analyze the effect of postdeposition annealing conditions on both the structure and the created defects in Zn 0.90 Co 0.10 O thin films, which deposited on the Si(100) substrates by the radio frequency magnetron sputtering technique using a homemade target. The dependence of the number and distribution of defects in homogeneously substituted Co 12 for Zn 12 ions in ZnO lattice on the annealing conditions is investigated. Orientations of thin films are in the [0002] direction with a surface roughness changing from 67 6 2 nm to 25.8 6 0.6 nm by annealing. The Co 12 ion substitution, changing from 7.5% 6 0.3% to 8.8 6 0.3%, leads to the formation of Zn-O-Co bonds instead of Zn-O-Zn bonds and splitting of the Co 2p energy level to Co 2p 1/2 and Co 2p 3/2 with an energy difference of 15.67 6 0.06 eV. The defects in the lattice are revealed from the correlations between Zn-O-Co bonds and intensity of the Raman peak at around 691 cm À1 . In addition, the asymmetry changes of O 1s peak positions in the x-ray photoelectron spectra are in agreement with the Raman results.

show abstract

The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

Cited by 21 publications

References 26 publications

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

The effects of postdeposition annealing conditions on structure and created defects in Zn_0.90Co_0.10O thin films deposited on Si(100) substrate

Contact Info

Product

Resources

About

The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

Cited by 21 publications

References 26 publications

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

The effects of postdeposition annealing conditions on structure and created defects in Zn0.90Co0.10O thin films deposited on Si(100) substrate

Contact Info

Product

Resources

About

The effects of postdeposition annealing conditions on structure and created defects in Zn_0.90Co_0.10O thin films deposited on Si(100) substrate