Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Lluscà, M.; López-Vidrier, J.; Lauzurica, S.; Sánchez-Aniorte, M.I.; Antony, Aldrin; Molpeceres, C.; Hernández, S.; Garrido, B.; Bertomeu, J.

doi:10.1016/j.jlumin.2015.06.017

Cited by 12 publications

(6 citation statements)

References 25 publications

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“…Values of the Rs and the integrated T in the range 400−1100 nm corresponding to the 8 laser-treated samples and the as-deposited and air-annealed ones. This is in contrast to what was observed in previous experiments[15,20], in which the doping level was obtained by placing the RE pellets on the erosion area of the ZnO target. In this work, however, the target was already a…”

contrasting

confidence: 88%

“…In order to optically activate the RE ions to achieve upconversion, a high temperature annealing treatment is necessary. According to previous results [20], ZnO:Er:Yb films post annealed either in air or in vacuum become almost insulating; instead, when the films were annealed with laser radiation, the rare earth ions were optically activated to present upconversion, whereas the films preserved the conductivity. This work presents the results on laser annealing of ZnO:Er:Yb films using 532 nm continuous wave (CW) laser radiation just before the damage threshold of the material, and confirms the effectiveness of this annealing treatment in achieving a transparent and conducting film that exhibits visible upconversion.…”

Section: Introductionmentioning

confidence: 58%

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Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

Lluscà

López-Vidrier

Lauzurica

et al. 2017

Journal of Luminescence

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A transparent and conducting ZnO:Er:Yb thin film with upconversion properties has been achieved after being annealed with continuous laser radiation just before the ablation point of the material. This work demonstrates that the laser energy preserves the conductivity of the film and at the same time creates an adequate surrounding for Er and Yb to produce visible upconversion at 660, 560, 520, and 480 nm under 980 nm laser excitation. The relation between the structural, electrical and upconversion properties is discussed. It is observed that the laser energy melts part of the material, which recrystallizes creating rare earth oxides and two different wurtzite structures, one with substitutional rare earths and oxygen vacancies (responsible for the conductivity) and the other without substitutional rare earth ions (responsible for the upconversion emission).

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contrasting

confidence: 88%

Section: Introductionmentioning

confidence: 58%

Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

Lluscà

López-Vidrier

Lauzurica

et al. 2017

Journal of Luminescence

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“…However, the perovskites can only absorb photons with energy higher than their bandgaps, most of the photons at near infrared (NIR) wavelength region cannot be captured. [22] Even though the bandgap is tunable by varying the chemical composition of the perovskites, but the most efficient perovskite solar cells can only absorb a small portion of solar spectrum in the ultraviolet and visible light ranges. [23] In particular, stateof-the-art efficient perovskite solar cells usually employ perovskites in terms of CH 3 NH 3 PbI 3 (MAPbI 3 ), CH(NH 2 ) 2 PbI 3 (FAPbI 3 ) or their mixtures as the photoactive layers.…”

Section: Present Challenges Of Perovskite Solar Cellsmentioning

confidence: 99%

Applications and functions of rare-earth ions in perovskite solar cells

Cang¹,

Qian

Wang

et al. 2022

Chinese Phys. B

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The emerging perovskite solar cells have been recognized as one of the most promising new-generation photovoltaic technologies owing to their potential of high efficiency and low production cost. However, the current perovskite solar cells suffer from some obstacles such as non-radiative charge recombination, mismatched absorption, light induced degradation for the further improvement of the power conversion efficiency and operational stability towards practical application. The rare-earth elements have been recently employed to effectively overcome these drawbacks according to their unique photophysical properties. Herein, the recent progress of the application of rare-earth ions and their functions in perovskite solar cells were systematically reviewed. As it was revealed that the rare-earth ions can be coupled with both charge transport metal oxides and photosensitive perovskites to regulate the thin film formation, and the rare-earth ions are embedded either substitutionally into the crystal lattices to adjust the optoelectronic properties and phase structure, or interstitially at grain boundaries and surface for effective defect passivation. In addition, the reversible oxidation and reduction potential of rare-earth ions can prevent the reduction and oxidation of the targeted materials. Moreover, owing to the presence of numerous energetic transition orbits, the rare-earth elements can convert low-energy infrared photons or high-energy ultraviolet photons into perovskite responsive visible light, to extend spectral response range and avoid high-energy light damage. Therefore, the incorporation of rare-earth elements into the perovskite solar cells have demonstrated promising potentials to simultaneously boost the device efficiency and stability.

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“…Additionally, and for the purpose of this review, we are interested in the thermal effects induced upon LA, thus we are focusing our attention to the ns pulse regime; nevertheless. Nevertheless, the utilization of ps, fs, and CW lasers for metal‐oxide film processing is additionally reported. It is, therefore, worth addressing the connection between CW and pulsed LA, as a scanning CW process shares similar principles with pulsed LA albeit with significantly lower peak power, defined by the scanning speed and laser spot size rendering a ms interaction with the film (in contrast to the typical ns pulses provided by excimer lasers).…”

Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Cited by 12 publications

References 25 publications

Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

Applications and functions of rare-earth ions in perovskite solar cells

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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