The effects of ion track structure in simulating single event phenomena

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

“…Analytic modeling of ion track structure indicates that the radial charge distribution narrows considerably with depth [29]. Ion track-structure sensitivity studies of charge collection using 3D device simulation have indicated that the variation in LET as the ion passes through the device and loses energy is of considerably greater importance [ 17,301. In fact, widely varying radial charge distributions produced at most a 6-7% variation in the current and charge collection transients [30]. While both PADRE and DAVINCI allow variation of charge density along the length of the path, only PADRE allows a varying radius along the path.…”

“…We used a varying LET along the length of the path based on TRIM92 calculations [31]. To determine the ramifications of the track structure on the terminal results, we simulated a diode transient of the type described in the next section using both our simplified track structure and the full power-law fit to the rigorous track structure as described in [30]. We found a maximum change in the peak current of 3%, less than 1% difference in the time to peak current, and less than 4% difference in the total collected charge.…”

Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

“…The charge generated in the ion track is incorporated in the generation term of the continuity equations and then goes on the transient simulation to calculate the effects of the new charge distribution on the running device's transient response [38].…”

Theoretical determination of the temporal and spatial structure of /spl alpha/-particle induced electron-hole pair generation in silicon

“…Because of this, the distribution of electron and hole velocities were randomly distributed in direction. A code such as TRKRAD used in [6] can be used to define a more physically correct initial distribution of charge. In spite of this shortcoming, we looked a variety of initial distributions of charge.…”

“…Modeling of individual devices and full circuits using a variety of simulation tools has been undertaken to understand and predict soft error rates (SER) due to -particles, heavy ions, and cosmic rays [3]- [5]. Accurate charge collection simulation results obtained from device simulations have been shown to depend on the spatial distribution of the generated electron-hole pairs [6]. Typical values for time constants used in -particle induced electron-hole pair generation models have been extracted from measurements of current transients on test structures [7].…”