The Effects of Insulator Surface-Ion Migration on MOS and Bipolar Integrated Circuits

Schlegel, E. S.; Keen, R.S.; Schnable, G. L.

doi:10.1109/irps.1970.362426

Cited by 9 publications

(7 citation statements)

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“…Excessively thin passivation layers tend to contain more pinholes than thicker layers (85) and are less effective in covering topography such as delineated metal lines. Also, any charges which move along the surface of the passivation layer are closer to the Si-SiO2 interface and thus exert more influence on device characteristics (273). Thicker layers, however, are more likely to contain nodules and are more likely to crack.…”

Section: Methodsmentioning

confidence: 99%

“…Regardless of deposited passivation layer thickness, layers of deposited dielectrics must be applied to properly cleaned wafers under suitable conditions to avoid metal penetration (20) and lateral charge spreading or lateral ion migration effects at the interface between thermally grown SiO2 and deposited dielectric (273,118,280,39).…”

Section: Methodsmentioning

confidence: 99%

“…It was subsequently realized that additional benefits could accrue from these coatings. These benefits include reduced effects of ion motion on the surface (273,275,280), lower susceptibility to metal corrosion (215,275), decreased susceptibility of metal stripes to electromigration failure (31,297,32,81), improved stability and reliability of thin-film resistors (144,342,234), and alkali-gettering capability in the case of phosphosilicate glasses (PSG). Anodic A12Os has also been reported to reduce susceptibility of A1 metallization to electromigration (180,77,178,263,81).…”

Section: Table II Stress In Low-temperature Deposited Passivation Lay...mentioning

confidence: 99%

“…Increased device stability is frequently obtained by specific device construction features which make the device less surface sensitive. Examples include resistive overlays (57), use of diffused channel stoppers (273,49), field plates (48,43,363,59), ion implanted surfaces (299,219), and use of beveled junctions (66,167,327,14,62) in high-voltage devices.…”

Section: Device Encapsulationmentioning

confidence: 99%

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Passivation Coatings on Silicon Devices

Schnable

Kern

Comizzoli

1975

J. Electrochem. Soc.

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Passivation coatings are widely used to improve the performance and reliability of silicon devices of various types, ranging from discrete mesa‐type diodes and transistors to complex planar silicon integrated circuits, and including both hermetic and plastic‐encapsulated devices. This paper reviews the materials and techniques used to apply passivation coatings to completed silicon devices. Principal production techniques used in passivation of silicon devices include thermal oxidation, high‐temperature diffusion, high‐temperature chemical vapor deposition of Si3N4 or Al2O3 , low‐temperature chemical vapor deposition of glasslike SiO2 or phosphosilicate layers (deposited at approximately 400°C), rf sputtering of SiO2 , mechanical deposition of glass frit layers which are subsequently fused, and application of organic polymer films.The effects of passivation layers on silicon device reliability are discussed, and the interrelationships among the silicon device, the passivation layer or layers used and the final encapsulation are indicated. Pertinent references on passivation and on related topics are cited in the text.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Table II Stress In Low-temperature Deposited Passivation Lay...mentioning

confidence: 99%

Section: Device Encapsulationmentioning

confidence: 99%

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Passivation Coatings on Silicon Devices

Schnable

Kern

Comizzoli

1975

J. Electrochem. Soc.

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“…3 I~~~b ias generates more junction leakage current which is able to counter-balance a larger surface leakage current produced by an increased power supply voltage, VDD. The basic failure mode is a surface leakage between the metal line and a capacitive node due to which the node discharges and rises to the negative power supply potential.…”

Section: Characteristics Of the Failure Modementioning

confidence: 99%