The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3

Proton damage effects in double polymorph γ/β-Ga2O3 diodes

“…9,23,24 Of course, for open space applications, much higher energies of particles and a much higher range of particles of interest is of interest. Such studies are being carried out for different semiconductors, the radiation tolerance of β-Ga 2 O 3 devices to protons in the 100 MeV–1 GeV range, 25,26 and to irradiation with high energy heavy ions have been published 27–29 and also demonstrate a high radiation tolerance of β-Ga 2 O 3 devices. Thus, comparing the radiation tolerance of γ/β-Ga 2 O 3 test devices to that of β-Ga 2 O 3 devices looks as a justified measure of the radiation-tolerance worthiness of the γ/β-Ga 2 O 3 samples in electronic sense.…”