Proton damage effects in double polymorph γ/β-Ga<sub>2</sub>O<sub>3</sub> diodes

Polyakov, Alexander Y.; Vasilev, Anton A.; Kochkova, Anastasiia I.; Shchemerov, Ivan V.; Yakimov, Eugene B.; Miakonkikh, Andrej V.; Chernykh, Alexei V.; Lagov, Petr B.; Pavlov, Yrii S.; Doroshkevich, A. S.; Isaev, R. Sh.; Romanov, Andrei A.; Alexanyan, Luiza A.; Matros, Nikolai; Azarov, Alexander; Kuznetsov, Andrej; Pearton, Stephen

doi:10.1039/d3tc04171a

J. Mater. Chem. C

2024

DOI: 10.1039/d3tc04171a

|View full text |Cite

Proton damage effects in double polymorph γ/β-Ga₂O₃ diodes

Alexander Y. Polyakov,

Anton A. Vasilev,

Anastasiia I. Kochkova

et al.

Abstract: The stable beta polymorph Ga2O3 was converted to gamma polymorph by ion irradiation. The current–voltage characteristics show the gamma polymorph is much more rad-hard.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing

Azarov,

Galeckas,

Cora

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (γ) film on the top of the monoclinic (β) substrate are fabricated by disorder‐induced ordering, known to be a practical way to stack these polymorphs together. Such bilayer structures are annealed to investigate optical properties and phase transformations. Specifically, photoluminescence and diffuse reflectance spectroscopy are combined with transmission electron microscopy, Rutherford backscattering/channeling spectrometry and X‐ray diffraction to monitor the evolutions. As a result, a two‐stage annealing kinetics is observed in γ/β Ga2O3 bilayers associated with the epitaxial γ‐to‐β regrowth at the interface at temperatures below 700 °C and a non‐planar γ‐to‐β phase transformation starting at higher temperatures. Thus, the present data enhance understanding of the polymorphism in Ga2O3, interconnecting the phase transformation kinetics with the evolution of the optical properties.

show abstract

Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing

Azarov,

Galeckas,

Cora

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

Thermal conductivity of double polymorph Ga2O3 structures

Abdullaev,

Sekerbayev,

Azarov

et al. 2024

APL Materials

View full text Add to dashboard Cite

Recently discovered double gamma/beta (γ/β) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing the chemical compositions of materials, in contrast to that in conventional heterostructures. In this work, for the first time, we investigate thermal transport in such homo-interface structures as an example of their physical properties. In particular, the cross-plane thermal conductivity (k) was measured by femtosecond laser-based time-domain thermoreflectance with MHz modulation rates, effectively obtaining depth profiles of the thermal conductivity across the γ-/β-Ga2O3 structures. In this way, the thermal conductivity of γ-Ga2O3 ranging from 1.84 to 2.11 W m−1 K−1 was found to be independent of the initial β-substrates orientations, in accordance with the cubic spinel structure of the γ-phase and consistently with the molecular dynamics simulation data. In turn, the thermal conductivity of monoclinic β-Ga2O3 showed a distinct anisotropy, with values ranging from 10 W m−1 K−1 for [−201] to 20 Wm−1 K−1 for [010] orientations. Thus, for double γ-/β-Ga2O3 polymorph structures formed on [010] β-substrates, there is an order of magnitude difference in thermal conductivity across the γ/β interface, which can potentially be exploited in thermal energy conversion applications.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Proton damage effects in double polymorph γ/β-Ga₂O₃ diodes

Abstract: The stable beta polymorph Ga2O3 was converted to gamma polymorph by ion irradiation. The current–voltage characteristics show the gamma polymorph is much more rad-hard.

Cited by 2 publications

References 47 publications

Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing

Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing

Thermal conductivity of double polymorph Ga2O3 structures

Contact Info

Product

Resources

About

Proton damage effects in double polymorph γ/β-Ga2O3 diodes

Abstract: The stable beta polymorph Ga2O3 was converted to gamma polymorph by ion irradiation. The current–voltage characteristics show the gamma polymorph is much more rad-hard.

Cited by 2 publications

References 47 publications

Optical Activity and Phase Transformations in γ/β Ga2O3 Bilayers Under Annealing

Optical Activity and Phase Transformations in γ/β Ga2O3 Bilayers Under Annealing

Thermal conductivity of double polymorph Ga2O3 structures

Contact Info

Product

Resources

About

Proton damage effects in double polymorph γ/β-Ga₂O₃ diodes

Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing

Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing