The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

Gassoumi, M.; Salem, Mohamed Mongi Ben; Saadaoui, Salah; Grimbert, B.; Fontaine, Julien; Gaquière, C.; Maâref, H.

doi:10.1016/j.mee.2010.09.027

Cited by 22 publications

(9 citation statements)

References 16 publications

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“…Using conductance deep-level transient spectroscopy, a defect level with activation energy of 0.26 eV has been found due to a trap located in the region below the 2-DEG channel [8]. So far, the other trap locations identified for GaN/SiC HEMTs are in the AlGaN layer [10], the AlGaN/GaN interface adjoining the channel and the surface along gate and drain ungated region [12] and the surface trap [13]. A comparison between the device parameters of the 2GF and 4GF GaN HEMTs is presented in table 1.…”

Section: Results and Analysismentioning

confidence: 99%

“…Growth of GaN-based devices on a silicon carbide (SiC) substrate prevents the devices from excessive heating due to the high thermal conductivity and high resistivity [3][4][5]. The presence of electronic traps [6][7][8][9][10][11][12][13][14] and high leakage currents [15] limits the performance of GaN devices as a next-generation technology of choice for high-frequency and high-power electronics. The Schottky parameters controlling the electron current at the heterointerface and depletion width in the semiconductor are key parameters of a device junction.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

Alim

Rezazadeh

Gaquière

2016

Semicond. Sci. Technol.

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Shifts in the threshold voltage V T subject to temperature in AlGaN/GaN-based high-electronmobility transistors (HEMTs) grown on silicon carbide substrate are reported. Variation of V T with drain-source voltage and temperature is investigated, including experimental characterization, modelling and analysis. Possible parameters that affect V T are Schottky barrier height of the device, along with trap-assisted phenomena, aluminium concentration and polarization fields depending on the dielectric, were studied. The threshold voltage and Schottky barrier height shift positively with temperature, and a zero temperature coefficient point in the transfer curve was found before the threshold voltage. An analytical model for threshold voltage V T based on lattice-mismatched Al x Ga 1−x N/GaN HEMTs is presented based on aluminium mole concentration, and it is found that V T shifts towards more negative values with increasing aluminium concentration. The model correctly predicts device performance and is found to be consistent with the measured results. These results are valuable for understanding the underlying physics of GaN/SiC HEMTs and their optimization with temperature.

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Section: Results and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

Alim

Rezazadeh

Gaquière

2016

Semicond. Sci. Technol.

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“…It should be, however, noted that the use of short gate lengths seem to be an appropriate way to achieve improved electron transport in AlGaN-related HEMTs. Experimental studies have been reported on the gate length effect in output characteristics I-V [15]. These studies demonstrated that reducing the gate length resulting in a higher drain current.…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Charfeddine¹,

Belmabrouk²,

Zaïdi³

et al. 2012

JMP

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A threshold-voltage-based 2-D theoretical model for the Current–Voltage characteristics of the AlGaN/GaN high electron mobility transistors (HEMT’s) is developed. The present work proposes an improved charge-control model by employing the Robin boundary condition when introduced the solution of the 2-D Poisson’s equation in the density of charge depleted in the AlGaN layer. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model in order to take into account the impact of gate lengths. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which can allow to adjust some of electron transport parameters in order to optimize the output current

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“…Because of low intrinsic carrier generation rate by thermal activation and high breakdown field due to wide band gap energy, GaN based HEMT is also more suitable candidate for high power and high frequency system operating under high temperature environment [4][5][6]. However, the performance of AlGaN/ GaN HEMTs at high frequency and high power degrades because of presence of electronic traps [7][8][9][10][11] and high leakage current [12]. This limitation can be overcome by introducing field plate (FP) approach to the AlGaN/GaN HEMT structure, which enhances the breakdown voltage and high frequency performance of the device.…”

Section: Introductionmentioning

confidence: 99%

Temperature based analysis of 3-step field plate AlGaN/GaN HEMT using numerical simulation

Neha

Kumari

Gupta

et al. 2019

Adv. Nat. Sci: Nanosci. Nanotechnol.

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In this work, temperature based instability of the 3-step field plate (FP) AlGaN/GaN HEMT has been explored using ATLAS TCAD. DC performance characteristics such as: drain current, trans-conductance and Ion/Ioff ratio at different temperatures (ranging from 300 K to 500 K) and GaN channel thicknesses (from 150 nm to 500 nm) have been investigated. It has been observed that, drain current decreases with rise in temperature with a coefficient of approximately −0.0031 mA μm−1 K−1. Subsequently, impact of temperature on breakdown voltage, electric field, electron temperature and parasitic capacitances has also been investigated. Enhancement in breakdown voltage and reduction in trans-conductance has been observed with rise in temperature for above zero temperature coefficient bias point. Along with temperature variation, impact of GaN channel, AlGaN barrier thickness and mole fraction of aluminium concentration has also been studied and it is seen that breakdown voltage and Ion/Ioff increases for thinner channel and barrier thickness.

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The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

Cited by 22 publications

References 16 publications

Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Temperature based analysis of 3-step field plate AlGaN/GaN HEMT using numerical simulation

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