The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Soylu, M.; Abay, B.; Onganer, Yavuz

doi:10.1016/j.jpcs.2010.07.003

Cited by 22 publications

(8 citation statements)

References 56 publications

(66 reference statements)

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“…Most studies of Schottky barrier diodes (SBDs) formed on n-InP were limited to the determination of the Schottky barrier height (SBH) at room temperature (RT) by measuring either the current-voltage (I-V) characteristics or the capacitance-voltage (C-V) characteristics of the diodes [6][7][8]. Therefore, analysis of the current-voltage (I-V) characteristics of the SBDs at room temperature only does not give detailed information about their conduction process or the nature of the barrier formed at the metal-semiconductor (M-S) interface.…”

Section: Introductionmentioning

confidence: 99%

Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements

Reddy¹,

Reddy²,

Reddy³

et al. 2011

JMP

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We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted

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Section: Introductionmentioning

confidence: 99%

Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements

Reddy¹,

Reddy²,

Reddy³

et al. 2011

JMP

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“…This modification is often attributed to the formation of a dipole layer between the semiconductor and the organic film even though the organic-inorganic interface appears abrupt and unreactive [6,7]. Until now, several attempts have been made to realize a modification and continuous control of the barrier height of InP-based Schottky devices using organic interlayer [8][9][10][11][12]. For instance, Gűllű.…”

Section: Introductionmentioning

confidence: 99%

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

Reddy¹,

Janardhanam²,

Jyothi³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The electrical properties of Ti/p-type InPSchottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

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“…Because of its 1.35 eV direct band gap, high carrier mobility, high saturation velocity, high absorption coefficient just above the band gap and breakdown voltage [19,20], indium phosphate (InP) is a promising material for high-speed electrical and optoelectronic devices such as photodetectors and solar cells [21,22]. InP solar cells have superior radiation resistance and this has led to considerable work on InP cells for space applications [23].…”

Section: Introductionmentioning

confidence: 99%

Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

Ocak¹,

Kulakçı²,

Turan³

et al. 2011

Journal of Alloys and Compounds

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The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Cited by 22 publications

References 56 publications

Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements

Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

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