The effects of annealing on non-polar (1 1 2¯ 0) a-plane GaN films

Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy

“…We observed that BSFs are formed at the GaN/sapphire or GaN/SiO 2 interfaces, confirming the observation of Hao [34], and that they cross the layer towards the surface (Fig. 7a).…”

“…BSFs are not the only stacking faults observed in a-GaN layers. We also observed in less proportion ð1 2 1 0Þ-prismatic stacking faults [34] and stacking domains ( Fig. 8a and b).…”

Defect reduction processes in heteroepitaxial non-polar a-plane GaN films

“…In this case, glide of the threading segment of a dislocation would also be promoted by the image forces arising from the free surface at the side facets of the islands. In this respect, it seems that PDs are able to glide within the (0001) plane (accompanied by a change in the basal plane stacking fault length) [8], whereas it is possible that the pure a-type TDs may also move within the prismatic (11 00) plane, as indicated by Fig. 2(a).…”

“…Growth along nonpolar crystal directions is a promising way of avoiding the quantum confined Stark effect [1,2], which arises due to these internal fields and, which can reduce the efficiency of nitride-based light-emitting devices. However, non-polar GaN heteroepitaxial films grown on sapphire substrates typically have a large density of threading dislocations and stacking faults [3][4][5][6][7][8].…”

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

“…[15][16][17][18][19][20][21] This mechanism may be responsible for the increase in carrier lifetime (Figure 2(a)) and for the improved efficiency (Figure 1) detected after annealing. It is worth noticing that the RBS-channeling curves of the annealed samples are considerably higher than those of a reference sample with lower threading dislocation density (TDD=10 6 cm −2 ).…”