Defect reduction processes in heteroepitaxial non-polar a-plane GaN films

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

“…Non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer.…”

“…It is not clear whether this is a measure of the true linewidth of the emission, or whether the measurement is affected by spectral diffusion. In this letter, an alternative method for the growth of non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) InGaN QDs by metal organic vapour phase epitaxy (MOVPE) is reported, utilising a temperature ramp in an ammonia and nitrogen environment to achieve improved luminescence properties. Low temperature cathodoluminescence (CL) and micro-photoluminescence (µPL) show the presence of sharp peaks in the collected spectra, whose linewidth is limited by the resolution of the detection system.…”

“…The final threading dislocation density was approximately 3 × 10 9 cm −2 and the basal plane stacking fault (BSF) density approximately 5 × 10 5 cm −1 . 13 An InGaN epitaxial layer (∼16 ML) was grown at 680 • C and 300 Torr and subjected to a temperature ramp over 90 s to 860 • C in a mixture of nitrogen and ammonia, which was followed by the growth of a 10 nm GaN cap layer at 860 • C, and another 10 nm GaN cap at 1050 • C at 100 Torr in hydrogen. Uncapped epilayer structures were also grown to study the effect of the temperature ramp on the surface morphology of the InGaN.…”

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

“…Sample d [11][12][13][14][15][16][17][18][19][20] mainly proceeds in the m direction. So the mosaic size in m direction will get larger improvement than the mosaic size in c direction because of the lateral overgrowth.…”

“…This technique, to some extent, simplified the template preparing process, but was still complicated enough to make it unfavorable for mass production. In addition, another method, using SiN x interlayer as a nanomask [15][16][17], was also introduced to improve the quality of a-plane GaN film. This kind of in-situ method was proved effective to reduce the density of defects and no ex-situ steps were involved.…”