The Effect of Volume and Surface Inhomogeneities on the Coercivity of Thin Magnetic Films

Malyutin, V. I.; Osukhovskii, V. E.; Иванов, А. А.; Chebotkevich, L. A.; Lobov, I. V.; Vorobiev, Yu. D.

doi:10.1002/pssa.2210930223

Cited by 9 publications

(2 citation statements)

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“…During annealing the grain size increases. This is the reason for rise of the coercive force component responsible for dispersion of magnetization of easy axes in multilayer film [24]:…”

Section: Resultsmentioning

confidence: 99%

Magnetic anisotropy and domain structure in spin-valves based on MTJ

Samardak¹,

Sukovatitsina²,

Ognev³

et al. 2011

J. Phys.: Conf. Ser.

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Abstract. We have studied the crystal structure, surface morphology, magnetic anisotropy, domain structure and tunnel magnetoresistance of spin-valves with a single and double MgO barrier layers. We have demonstrated the domain structure for soft and hard magnetic layers and observed significant changes after low temperature annealing. We have carried out magnetoresistance measurements using current-in-plane (CIP) four-probe technique and discovered a substantial difference in the values of TMR ratio for single and double MTJ spinvalves. It is shown that domain structure and magnetization reversal are the same for both systems, but otherwise the behavior of tunnel magnetoresistance is different, because of second MgO barrier effects on the system conductivity. The ability to manipulate the magnetization direction in MTJ systems using temperature annealing is demonstrated. It makes these structures possible for new applications in nanoelectronics as magnetic recording media and high sensitive sensors. 1.IntroductionThe multicomponent magnetic systems are new class of spintronic materials having unique combination of magnetic and electrical properties for prospective nanoelectronic applications as a nonvolatile magnetoresistance memory (MRAM), spin-valve sensors and microwave spin-current generators [1][2][3]. The spin-valves based on magnetic tunnel junctions are very interesting objects for investigation, because of they combine all remarkable properties of both devices: high magnetic field sensitivity and high value of magnetoresistance [4,5]. The classical spin-valve is based on two ferromagnets with different coercive forces separated by a thin metal spacer [5]. The relative magnetization orientation of the two ferromagnetic layers strongly modulates the charge flow through the structure. Using this property of the spin-valve, external magnetic field acting on the magnetic moments of the ferromagnetic layers can be sensed electrically. Spin-valves with insulating interlayers, such as Al 2 O 3 [6] or MgO [7], are called magnetic tunnel junctions (MTJs) and designed to have two stable parallel and anti-parallel states, can also serve as non-volatile solid-state memory elements [8]. These applications, as read head sensors in hard magnetic disks and memory cells in MRAM are perfect examples of a fast transformation of a fundamental physics discovery [9][10][11] in to large scale practical devices. This makes spintronic nanostructures not only of fundamental interest, 1To whom any correspondence should be addressed. Published under licence by IOP Publishing Ltd

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“…During annealing the grain size increases. This is the reason for rise of the coercive force component responsible for dispersion of magnetization of easy axes in multilayer film [24]:…”

Section: Resultsmentioning

confidence: 99%

Magnetic anisotropy and domain structure in spin-valves based on MTJ

Samardak¹,

Sukovatitsina²,

Ognev³

et al. 2011

J. Phys.: Conf. Ser.

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“…During annealing the grain size increases. This is the reason for the rise of the coercive force component responsible for dispersion of easy axes in multilayer film [18]:…”

Section: Resultsmentioning

confidence: 99%

Magnetization Reversal and Domain Structure оf Magnetic Tunnel Junctions

Samardak

Sukovatitsina

Ognev

et al. 2010

SSP

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This paper is devoted to the investigation of crystalline structure, surface morphology, magnetic anisotropy, coercive force and domain structure of spin-valves with a single and double MgO barrier layers. It is shown that domain structure and magnetization reversal are the same for both systems, but otherwise the behavior of tunnel magnetoresistance is different. The approach to control magnetic anisotropy in soft magnetic layer using temperature annealing is demonstrated. It makes these structures possible for new applications in nanoelectronics.

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