The effect of underlayers on defect-related droop in InGaN-based light-emitting diodes

Wang, Min-Shuai; Huang, Xiaojing; Cai, Xiaomei; Yang, Liu; Zheng, Kai

doi:10.1007/s10854-017-6879-5

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…When fabricating nanocolumn μ-LEDs, the p-AlGaN electron blocking layer (EBL), p-GaN layer, and high-doped p + -contact layer were grown on the MQWs growth. The InGaN/GaN SL underlayer with a lower In composition helps suppress abrupt increases in the strain at the heterointerface in the red-emitting InGaN active layer with a higher In composition [30][31][32][33][34]. Although the SL underlayer has been utilized for a long time in nanocolumn devices [32][33][34], there has not been a systematic discussion of the detailed crosssectional structural changes of the SL layers.…”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs

et al. 2023

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In this study, the growth behavior of Indium gallium nitride (InGaN)-based nanocolumn arrays was investigated, and red emission nanocolumn micro-light emitting diodes (μ-LEDs) were fabricated. The internal structure of the InGaN/GaN superlattice (SL) layer under the multiple-quantum-well (MQW) active layers was evaluated using high-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) analysis. It was revealed that the InGaN crystal plane at the top of the nanocolumn changed from the c-plane, (1-102) plane, to the (10-11) plane as the number of SL pairs increased. A semipolar (10-11) plane was completely formed on top of the nanocolumn by growing InGaN/GaN SLs over 15–20 pairs, where the InGaN/GaN SL layers were uniformly piled up, maintaining the (10-11) plane. Therefore, when InGaN/AlGaN MQWs were grown on the (10-11) plane InGaN/GaN SL layer, the growth of the (10-11) plane semipolar InGaN active layers was observed in the HAADF-STEM image. Moreover, the acute nanocolumn top of the (10-11) plane of the InGaN/GaN SL underlayer did not contribute to the formation of the c-plane InGaN core region. Red nanocolumn μ-LEDs with an φ12 µm emission window were fabricated using the (10-11) plane MQWs to obtain the external quantum efficiency (EQE) of 1.01 % at 51 A/cm2. The process of nanocolumn μ-LEDs suitable for the smaller emission windows was provided, where the flat p-GaN contact layer contributed to forming a fine emission window of φ5 µm.

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Section: Methodsmentioning

confidence: 99%

InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs

et al. 2023

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“…Many reports have shown improved optical properties of InGaN QWs by insertion of underlayers (ULs) beneath the QWs, where the reported ULs have consisted of InGaN monolayers with dilute indium compositions, an InGaN/GaN superlattice, and combinations of these. [5][6][7][8][9][10][11][12][13][14][15] The various mechanisms of the improvements exhibited by the ULs have been discussed and proposed in these previous works. One of the proposed mechanisms is an increase of the carrier recombination rate at the InGaN/GaN QWs owing to a reduction the quantum-confined Stark effect.…”

Section: Introductionmentioning

confidence: 99%

InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer

Kusanagi

Kanitani

Kudo

et al. 2019

Jpn. J. Appl. Phys.

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The effect of internal strain on the luminescence properties of an InGaN single quantum well (SQW) was investigated as a function of modification via an underlayer (UL). Single In0.25Ga0.75N QWs (λ = 520 nm) 3 nm thick were grown on various ULs on a sapphire substrate, where the two UL types included (1) a buffer layer onto which an InGaN layer with a very small amount of In was inserted and (2) a buffer layer grown using different carrier gases. The SQWs were then analyzed by temperature-dependent time-resolved photoluminescence, scanning electron microscopy and cathodoluminescence. The experimental results show that the density of non-radiative recombination centers and the level of potential fluctuation in the SQWs decrease with insertion of an In x Ga1−x N UL possessing a quite low but sufficient indium content (x = 0.007). The density of non-radiative recombination centers in the SQW on the H2 carrier-grown UL, however, is large.

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The effect of underlayers on defect-related droop in InGaN-based light-emitting diodes

Cited by 2 publications

References 10 publications

InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs

InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs

InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer

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