High-angle annular dark field scanning transmission electron microscopy and atom probe tomography of the V-shaped pits in GaInN/GaN multiple quantum wells have revealed that a quantum well structure exists at the slope region of the V-shaped pits. Their thickness and In concentrations were found to be much lower compared to those of the flat region. This suggests that threading dislocations in the V-shaped pits act as energy barriers for the lateral transport of charge carries and that the pit center may not work properly for vertical transport because of the collapse of well-defined quantum well structures.
High mobility and highly reliable self‐aligned top‐gate oxide TFTs were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing was confirmed by laser‐assisted atom probe tomography. The high mobility of the top‐gate TFT with a‐ITZO channel was demonstrated to be 32 cm2/Vs. A 9.9‐inch diagonal qHD AM‐OLED display was fabricated using a five‐mask backplane process to demonstrate an applicable solution for large size and high‐resolution AM‐OLEDs.
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