The effect of tungsten and boron on the Cu barrier and oxidation properties of thin electroless cobalt–tungsten–boron films

Characteristics of electrodeposited CoWP capping layers using alkali-metal-free precursors

“…However, films deposited from iron group metals alone have many grain boundaries, which provides diffusion pathways for copper. It is known that the grain boundaries of the iron group metal films can be stuffed with refractory metals and phosphorous (or boron) [5,6]. Hence, a refractory metal and phosphorous (or boron) are usually deposited together along with the iron group metals.…”

Development of an alkali-metal-free bath for electroless deposition of Co-W-P capping layers for copper interconnections

“…Tel. : +82 31 219 2389; fax: +82 31 219 1612. cap copper interconnections with cobalt-containing films such as Co-P, Co-W-P, Co-W-B and Co-Mo-P [1,[9][10][11][12] and nickelcontaining films such as Ni-P, Ni-W-P and Ni-Re-P [13,14]. Among the above-mentioned metallic capping/barrier layers, it was reported that the Co-W-P films had better performance as an effective capping/barrier layer for copper metallization up to 550 • C [3,16].…”

“…Co-W-P thin films can be deposited by both electroless [10][11][12] and electrochemical [17][18][19][20] deposition methods. The electroless plating, however, is widely used to deposit the metallic capping/barrier layers because it is a very simple and inexpensive method, does not require much instrumentations and offers highly selective and conformal deposition [5,12,15].…”

Optimisation of process parameters for electroless plating of Co–W–P capping layers from an alkali-metal-free bath

“…Therefore, there is much research interest in the fabrication of metallic capping layers. Effort has been made to cap copper interconnections with cobalt-containing films such as Co-P, Co-W-P, Co-W-B and Co-Mo-P [1,[9][10][11][12] and nickelcontaining films such as Ni-P, Ni-W-P and Ni-Re-P [13][14][15]. Among the above-mentioned metallic capping/barrier layers, it was reported that the Co-W-P films had better performance as an effective capping/barrier layer for copper metallization up to 550°C [3,16].…”