Development of an alkali-metal-free bath for electroless deposition of Co-W-P capping layers for copper interconnections

Dulal, S.M.S.I.; Kim, Tae Ho; Rhee, Hyongmoo; Sung, Jiha; Kim, Chang‐Koo

doi:10.1016/j.jallcom.2007.12.003

Cited by 19 publications

(4 citation statements)

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“…5) Thereafter, the failure at the interface between the dielectric cap and Cu due to poor adhesion is drastically improved. As materials applicable to a metal cap, CoWP and related alloy films formed by electroless plating with Pd activation or self-activation, [5][6][7][8][9][10][11][12] such as Co films formed by chemical vapor deposition, 13,14) are examined. However, there are concerns about the oxidation resistance of Co and the thickness control of plating films in a thin region.…”

Section: Introductionmentioning

confidence: 99%

Application of Al–Nb alloy film to metal capping layer on Cu

Takeyama

Noya

2016

Jpn. J. Appl. Phys.

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An Al–Nb alloy film with the Al72Nb28 composition is applied as a candidate metal capping layer on Cu interconnects. In the Al72Nb28/Cu/SiO2/Si model system, the preferential oxidation of Al forming a thin surface Al2O3 layer occurs owing to oxidation in air for 1 h at temperatures up to ∼300 °C, resulting in the protection of the layers underneath from further oxidation, although a slight Cu intermixing into Al–Nb occurs. With increasing oxidation temperature up to 500 °C, the surface Al2O3 layer still grows by the preferential oxidation of Al and rejects Cu atoms from the surface oxidized layer. Although Nb atoms are left behind in the surface oxidized layer, they are in a metallic state owing to the high solubility of oxygen before forming an oxide. The extremely low solubility of Nb in Cu also protects Cu without excess intermixing. A good passivation characteristic of the Al72Nb28 alloy film on Cu is demonstrated.

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Section: Introductionmentioning

confidence: 99%

Application of Al–Nb alloy film to metal capping layer on Cu

Takeyama

Noya

2016

Jpn. J. Appl. Phys.

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“…EL CoW alloys containing P or B deposited from alkali metal-free baths find use as diffusion barriers for Cu circuitry in ICs. − EL deposition of these alloys is often made onto catalyzed aminosiloxane SAMs, which also possess barrier properties and promote plating selectivity. Malki et al have shown that 3D growth of CoWP alloys on Au NP-catalyzed aminosiloxane SAMs is influenced and controlled by the nature of the amine.…”

Section: Elementsmentioning

confidence: 99%

Electroless Metallization of the Elements: Survey and Progress

Turró

Dressick

2022

ACS Appl. Electron. Mater.

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The electroless plating of metals and their alloys, oxides, and chalcogenides represents a critically important technology for the automotive, aerospace, machine tools, and, especially, the electronics industries. Since the initial efforts involving the plating of industrially important metals, such as Ni, Co, Cu, Ag, and Au, in the mid-20th century, the process has evolved to encompass a growing number of elements. At the same time, this expansion in the palette of accessible metals has enabled progress in these industries and evoked new nonconventional applications. In this review, we collect and survey available electroless processes in aqueous and organic solvent systems for each element organized according to position in the Periodic Table as a resource for the reader. Examples illustrating progress in the field are presented and are described in sufficient detail to be useful and understandable for both the expert and nonexpert. Given the historical importance of electronics as a driver for development of electroless processes, examples are electronics-related where possible. However, we strive to also include examples of applications in nontraditional fields to provide the reader with a sense of generality available for electroless methods. The review closes with an outlook for the field and a challenge to scientists and engineers to adapt electroless processes for new applications to continue the growth of the field.

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“…Alkali-metal ions such as Na + and K + in the bath are deleterious to the microelectronic devices since they cause threshold voltage instability due to ion transport under electric field and insulator instabilities such as reduced time dependant dielectric breakdown (TDDB) or increased defect density due to the interaction of the sodium and potassium which are glass modifiers [22]. Therefore, a novel bath consisting of alkali-metal-free chemicals has been developed for electroless plating of Co-W-P films as a capping layer for copper interconnection and an optimisation of bath composition has been made [23]. It is well known that pH, temperature and solution agitation play very important roles in electroless deposition process.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%