The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

Sánchez-García, M.Á.; Calleja, E.; Monroy, E.; Sánchez, F. J.; Calle, F.; Muñoz, E.; Beresford, R.

doi:10.1016/s0022-0248(97)00386-2

Cited by 318 publications

(225 citation statements)

References 17 publications

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“…The diffusion length (A), given by expression (1), depends on the average jump distance (a) between adsorption sites at the surface, the ad-atom desorption energy (Qdes). and the activation energy (potential well) for a surface diffusion jump (Qd) A = V2a exp f Qdes ~ Qd V 2kT (1) Atomically flat nanocolumn sidewalls, with ideal surface reconstructions, may provide few adsorption sites, far from each other, characterized by rather small Qd values. Since Qd es is fixed for a given surface, ad-atom, and temperature, the diffusion length on such a surface should be quite high, resulting in a rather short time for the ad-atoms to incorporate into the crystal.…”

Section: Discussionmentioning

confidence: 99%

“…Ga-droplet patterns were generated by exposing the substrate to a Ga flux at 560 °C at which Ga desorption is negligible [1 ]. This exposure was monitored by reflection high energy electron diffraction (RHEED) showing that the high diffraction orders vanished after 0.5 monolayers (ML) of Ga deposition [13], turning the (7x7) reconstruction into an (lxl) one.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Ristić

Calleja²,

Fernández-Garrido³

et al. 2008

Journal of Crystal Growth

175

152

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Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Ristić

Calleja²,

Fernández-Garrido³

et al. 2008

Journal of Crystal Growth

175

152

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“…Pioneering research on GaN nanorod growth was focusing on the self-organized growth of GaN nanorods by molecular beam epitaxy (MBE). 9,10 Initial publications discussed proper growth conditions for GaN nanorods. Sanchez-Garcia et al found that high V/III ratio during MBE growth of GaN on Si (111) substrates results in the growth of columnar GaN structures, which show intense and sharp exitonic emission in low temperature PL spectra.…”

Section: Introductionmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

486

392

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…At this temperature and under N-rich growth conditions, PAMBE is known to produce N-polar catalyst-free GaN NWs with a radius in the range of a few tens of nanometers [29][30][31][32][33][34]. The structures under study consist of a nonintentionally doped (NID) GaN NW base with a length of 600 nm and a radius ranging from 25-40 nm, followed by 40 periods of GaN:Ge/AlN (nominally 4 nm/4 nm) nanodisks, and a 20-nm-thick NID GaN cap layer.…”

Section: Methodsmentioning

confidence: 99%

Long-lived excitons in GaN/AlN nanowire heterostructures

et al. 2015

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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by doping. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.

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The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

Cited by 318 publications

References 17 publications

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

GaN based nanorods for solid state lighting

Long-lived excitons in GaN/AlN nanowire heterostructures

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