The effect of the AlxGa1−xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE

High Al-content AlxGa1−xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

“…The results revealed a high Al-mole fraction with a good crystalline quality of Al x Ga 1−x N thin film layer. This is in contrast to the literature [11][12][13] which reported that the growth of III-nitrides on Si (1 1 1) produce relatively low crystalline quality when the Al-mole fraction increases. However, it can be seen that our XRD and EDS results do not reveal the trend as predicted in [11][12][13].…”

“…This is in contrast to the literature [11][12][13] which reported that the growth of III-nitrides on Si (1 1 1) produce relatively low crystalline quality when the Al-mole fraction increases. However, it can be seen that our XRD and EDS results do not reveal the trend as predicted in [11][12][13]. This is most probably due to the samples were used in their studies not grown under the same conditions; thus, the crystalline qualities of the epilayer are not only Al-mole fraction dependent, but also growth parameters dependent.…”

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

“…During the last decade, a lot of work has been dedicated to the epitaxial growth of GaN on Si(111) substrates [1][2][3][4][5][6][7][8][9] because of the future prospects for large scale, low-cost mass production of group-III nitride-based devices. This is well highlighted by recent progress in terms of material quality figures of merit as well as device operation demonstration [10][11][12].…”

“…[2,6]) before the overgrowth of GaN, most groups try to avoid the nitridation of the Si surface, mainly because it may result in the formation of amorphous Si 3 N 4 obviously not suitable for subsequent epitaxial growth. This is, for example, achieved by depositing a first Al layer, typically in the monolayer (ML) range, before exposing intentionally the surface to both the Al and N fluxes necessary to grow the AlN buffer layer [3,4,7,12]. However, in most cases an unintentional partial nitridation of the surface cannot be completely eliminated, as rightly noted by Nikishin et al [4].…”

High responsivity ultraviolet photodetector based on crack‐free GaN on Si (111)

“…Further growth details can be found in Ref. [12,13]. Figure 1 shows the typical schematic diagram of the GSMBE grown structure.…”