High frequency capabilities of carbon nanotube field-effect transistors (CNTFETs) are investigated. Structures with a large number of single-walled carbon nanotubes were fabricated using dielecrophoresis to increase the density of nanotubes in the device channel. The authors obtained an intrinsic current gain cutoff frequency of 30GHz establishing state-of-the-art high frequency (hf) potentialities of CNTFETs. The device also showed a maximum stable gain above 10dB at 20GHz. Finally, the parameters of an equivalent circuit model of multitube CNTFET at 20GHz are determined, which open the route to the modeling of nanotubes-based hf electronics.

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