The effect of stress-induced anisotropy in patterned FeCo thin-film structures

Yu, Winnie; Bain, J.A.; Uhlig, W. Casey; Unguris, John

doi:10.1063/1.2170066

Cited by 14 publications

(8 citation statements)

References 5 publications

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“…This stress is on par with previous values of stress in sputtered FeCo films. 27 For the films grown under strain, this initial compressive force will become tensile upon release. Although the strain in the films on PIN−PMN−PT will be different, these results indicate that the deposition alone is enough to impart a significantly large stress and thus plastically deform the metal films.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Enhancing Converse Magnetoelectric Coupling Through Strain Engineering in Artificial Multiferroic Heterostructures

Garten

Staruch

Bussmann

et al. 2022

ACS Appl. Mater. Interfaces

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Magnetoelectric materials present a unique opportunity for electric fieldcontrolled magnetism. Even though strain-mediated multiferroic heterostructures have shown unprecedented increase in magnetoelectric coupling compared to single-phase materials, further improvements must be made before ultra-low power memory, logic, magnetic sensors, and wide spectrum antennas can be realized. This work presents how magnetoelectric coupling can be enhanced by simultaneously exploiting multiple strain engineering approaches in heterostructures composed of Fe 0.5 Co 0.5 /Ag multilayers on (011) Pb(In 1/2 Nb 1/2 )O 3 −Pb(Mg 1/3 Nb 2/3 )O 3 −PbTiO 3 piezoelectric crystals. When grown and measured under strain, these heterostructures exhibit an effective converse magnetoelectric coefficient in the order of 10 −5 s m −1 : the highest directly measured, nonresonant value to-date. This response occurred at room temperature and at low electric fields (<2 kV cm −1 ). This large effect is enabled by magnetization reorientation caused by changing the magnetic anisotropy with strain from the substrate and the use of multilayered magnetic materials to minimize the internal stress from deposition. Additionally, the coercive field dependence of the magnetoelectric response under strain suggests contributions from domainmediated magnetization switching modified by voltage-induced magnetoelastic anisotropy. This work highlights how multicomponent strain engineering enables enhanced magnetoelectric coupling in heterostructures and provides an approach to realize energy-efficient magnetoelectric applications.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Enhancing Converse Magnetoelectric Coupling Through Strain Engineering in Artificial Multiferroic Heterostructures

Garten

Staruch

Bussmann

et al. 2022

ACS Appl. Mater. Interfaces

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“…Spin wave generation is through applying an alternating voltage at the top metal contact, which results in oscillating strain in the piezoelectric layer that creates magnetoelastic spin wave excitation [16]. Detection of spin waves is through the reverse process from magnetic to electric domain [13], [17].…”

Section: A Physical Componentsmentioning

confidence: 99%

Wave Interference Functions for Neuromorphic Computing

Rahman

Khasanvis

Shi

et al. 2015

IEEE Trans. Nanotechnology

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Neuromorphic computing mimicking the functionalities of mammalian brain holds the promise for cognitive capabilities enabling new intelligent applications. However, research efforts so far mainly focused on using analog and digital CMOS technologies to emulate neural activities, and are yet to achieve expected benefits. They suffer from limited scalability, density overhead, interconnection bottleneck and power consumption related constraints. In this paper, we present a transformative approach for neuromorphic computing with Wave Interference Functions (WIF). This is a framework using emerging nonequilibrium wave phenomenon such as spin waves. WIF leverages inherent wave attributes for multidimensional, multivalued data representation and communication, resulting in reduced connectivity requirements and efficient neural function implementations. It also yields a compact implementation of an artificial neuron. Moreover, since WIF computation and communication are in the spin domain, extremely low-power operation is possible. Our evaluations indicate upto 57× higher density, 775× lower power and 2× better performance when compared to an equivalent 8-bit 45-nm CMOS neuron. Our scalability study using arithmetic circuits for higher bit-width neuron implementations indicate upto 63× density, 884× power and 3× performance benefits in comparison to a 32-bit CMOS equivalent design at 45 nm.

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“…The general view of the device structure is shown in Fig.3(a). A Co 30 Fe 70 film (saturation magnetization of 2.2 T) was deposited by high vacuum rfsputtering system on silicon substrate and covered by 300nm silicon oxide. There are two microstrips (asymmetric coplanar strip transmission lines), on the top of the structure.…”

Section: Experimental Data and Numerical Simulationsmentioning

confidence: 99%

“…The bias voltage can be applied across the structure using the gate electrode and a conducting ferromagnetic layer (CoFe, or NiFe, for example). The stress produced by the piezoelectric results in the easy axis rotation in the piezomagnetic material [30]. In Fig.1(d) we have schematically shown a magnetoelectric cell consists of a piezoelectric (e.g.…”

mentioning

confidence: 99%

Spin Wave Magnetic NanoFabric: A New Approach to Spin-Based Logic Circuitry

2008

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We propose and describe a magnetic NanoFabric which provides a route to building reconfigurable spin-based logic circuits compatible with conventional electron-based devices. A distinctive feature of the proposed NanoFabric is that a bit of information is encoded into the phase of the spin wave signal. It makes possible to transmit information without the use of electric current and utilize wave interference for useful logic functionality. The basic elements include voltage-to-spin wave and wave-to-voltage converters, spin waveguides, a modulator, and a magnetoelectric cell. As an example of a magnetoelectric cell, we consider a two-phase piezoelectric-piezomagnetic system, where the spin wave signal modulation is due to the stress-induced anisotropy caused by the applied electric field. The performance of the basic elements is illustrated by experimental data and results of numerical modeling. The combination of the basic elements let us construct magnetic circuits for NOT and Majority logic gates. Logic gates AND, OR, NAND and NOR are shown to be constructed as the combination of NOT and a reconfigurable Majority gates. The examples of computational architectures such as Cellular Automata, Cellular Nonlinear Network and Field Programmable Gate Array are described. The main advantage of the proposed NanoFabric is in the ability to realize 2 logic gates with less number of devices than it required for CMOS-based circuits.Potentially, the area of the elementary reconfigurable Majority gate can be scaled down to 0.1µm 2 . The disadvantages and limitations of the proposed NanoFabric are discussed.3

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The effect of stress-induced anisotropy in patterned FeCo thin-film structures

Cited by 14 publications

References 5 publications

Enhancing Converse Magnetoelectric Coupling Through Strain Engineering in Artificial Multiferroic Heterostructures

Enhancing Converse Magnetoelectric Coupling Through Strain Engineering in Artificial Multiferroic Heterostructures

Wave Interference Functions for Neuromorphic Computing

Spin Wave Magnetic NanoFabric: A New Approach to Spin-Based Logic Circuitry

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