The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode

Park, Eun-Hyun; Kang, David Nicol Hun; Ferguson, Ian T.; Park, Soo-Kun Jeon Joong-Seo; Yoo, Tae‐Kyung

doi:10.1063/1.2431717

Cited by 35 publications

(19 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first generation of III-nitrides LEDs are grown on sapphire substrates and show strong polarized electroluminescence. IQE of these polar LEDs achieve over 80% at low current densities, although experience "efficiency droop" at higher drive currents (22), shown in Figure 2(a). The second generation of III-nitrides LEDs are grown on nonpolar/semipolar GaN substrates.…”

Section: Figure 1 Bandgap Vs Lattice Constant For Iii-nitrides (2)mentioning

confidence: 99%

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Zhou¹,

Ghods²,

Saravade³

et al. 2017

ECS Trans.

View full text Add to dashboard Cite

III-nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The lightemitting diodes based on III-nitrides revolutionize the solid-state lighting industry. III-nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the IIInitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated.

show abstract

Section: Figure 1 Bandgap Vs Lattice Constant For Iii-nitrides (2)mentioning

confidence: 99%

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Zhou¹,

Ghods²,

Saravade³

et al. 2017

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Dealing with observable parameters only, Eqs. (2) can be used to estimate contributions of various channels to the total recombination current. Figure 1 displays the fractions of the Shockley-Read, radiative, and Auger recombination currents obtained from the reported data 9-11 for the LED structures of rather low (a), intermediate (b) and super-high (c) efficiency (in the latter case, the compilation of the data for two different LED structures and chips operating at low and high current densities under continuous-wave (CW) and pulsed current pumping, respectively, was used).…”

Section: Interplay Between Various Recombination Channelsmentioning

confidence: 99%

“…The importance of quantum effects in the transport of non-equilibrium electrons and holes in such heterostructures is also discussed in the paper. the structure and its IQE η are determined by the equations: 2 …”

Section: Introductionmentioning

confidence: 99%

“…Nowadays, modeling and simulation of III-nitride LEDs has become an important stage of the device design and optimization at leading industrial companies and research centers [1][2][3][4][5] . The simulations cover various aspects of the LED operation, considering electrical, optical, and thermal phenomena in the devices with a certain degree of coupling between them.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Simulation of light-emitting diodes for new physics understanding and device design

Bulashevich¹,

Khokhlev²,

Evstratov³

et al. 2012

SPIE Proceedings

View full text Add to dashboard Cite

The paper discusses various factors affecting internal quantum efficiency (IQE) of state-of-the-art III-nitride lightemitting diodes (LEDs). A general figure of merit for LED heterostructures, namely the quality factor, is proposed on the basis of a simple recombination model, which enables comparison of overall performances of the structures either emitting light at different wavelengths or having substantially different designs. The relationships between the quality factor, maximum value of IQE, and IQE droop with the current density are revealed. Some ways for IQE improvement and reducing its droop are considered. Among them, the use of short-period superlattice (SPSL) active regions is found to be quite promising. The operation of such structures and their properties are examined in detail by simulations accounting for quantum corrections to electron and hole transport within the quantum-potential concept.

show abstract

“…Indium fluctuation in InGaN/GaN QWs should be taken into account to have better explanations of the performance of devices [11]. InGaN/GaN QWs with Si-doped QBs have shown the properties of modifications of material nanostructure and formations of nanoscale islands due to the spiral growth of the QW layers [12], promotion of the thermal stability of InGaN/GaN QWs [13], improvement of light output power and electrostatic discharge (ESD) behaviors of the LED as the doping concentration in QBs is increased [14], easy blocking of hole carrier transport leading to recombination of excitons at the wells between p-type GaN (p-GaN) and the doped barriers [15], etc.…”

Section: Introductionmentioning

confidence: 99%

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

et al. 2017

View full text Add to dashboard Cite

The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage (I-V) curves, light output power versus injection current (L-I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

show abstract

The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode

Cited by 35 publications

References 6 publications

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Simulation of light-emitting diodes for new physics understanding and device design

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Contact Info

Product

Resources

About