The effect of resist contrast on linewidth error induced by e-beam proximity exposure

Abstract

Articles you may be interested inProximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography Low voltage, high resolution studies of electron beam resist exposure and proximity effect

A Review of Proximity Effect Correction in Electron-beam Lithography

“…Since the correction scheme of GHOST is simple and general enough to be implemented on any type of e-beam lithography systems, its application was further extended with various patterns and e-beam parameter settings [37,46,47,50,52,53,54,70]. Watson et al later improved GHOST by applying the pattern exposure and the correction exposure at the same time to eliminate the throughput drawback of the direct-write GHOST [74,87].…”