2012
DOI: 10.1063/1.4742983
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The effect of photonic bandgap materials on the Shockley-Queisser limit

Abstract: The influence of quantum dot size on the sub-bandgap intraband photocurrent in intermediate band solar cells Appl. Phys. Lett. 101, 133909 (2012) InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy Appl. Phys. Lett. 101, 133110 (2012) An energy-harvesting scheme utilizing Ga-rich CuIn(1−x)GaxSe2 quantum dots for dye-sensitized solar cells Appl. Phys. Lett. 101, 123901 (2012) Holographic modification of TiO2 nanostructure for enhanced char… Show more

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Cited by 52 publications
(51 citation statements)
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“…The seminal paper written by Shockley and Queisser in 1961 presents photovoltaic limiting efficiencies as a function of a single parameter, the semiconductor bandgap, under the assumption that the only loss mechanism is radiative recombination in the semiconductor. While many corollaries to this limit exist23456789, the transcendence of this analysis is enabled by its elegance, analytic simplicity and basis in the ultimate limit of semiconductor device physics.…”
mentioning
confidence: 99%
“…The seminal paper written by Shockley and Queisser in 1961 presents photovoltaic limiting efficiencies as a function of a single parameter, the semiconductor bandgap, under the assumption that the only loss mechanism is radiative recombination in the semiconductor. While many corollaries to this limit exist23456789, the transcendence of this analysis is enabled by its elegance, analytic simplicity and basis in the ultimate limit of semiconductor device physics.…”
mentioning
confidence: 99%
“…Despite this theoretical prediction, until recently even the highest efficiency solar cells were not close enough to the radiative limit for such an effect to be observed. [5][6][7] However, with the introduction of cells lied off the growth substrate, GaAs cells have shown signicant gains in efficiency due to V oc increases, indicating an increase in the external radiative efficiency (ERE) of the cell. [2][3][4] In these lied-off GaAs cells radiatively emitted photons are reected from a metallized back surface instead of being absorbed in the substrate, resulting in a large increase in ERE and V oc .…”
Section: Introductionmentioning
confidence: 99%
“…In order to determine the maximum efficiency, the equations of Shockley and Queisser can be used if the semiconductor bandgap energy is replaced with the photonic bandgap energy [13]. For low bandgap materials (<1.1 eV), the addition of a photonic crystal improves the efficiency.…”
Section: Photonic Aspects Of Detailed Balancementioning
confidence: 99%
“…For a low bandgap material like Ge, the current is high but the voltage is low. Thus, restricting the absorption and emission allows the device to work at a higher voltage, which leads to an efficiency improvement [13]. For a material like GaAs, there is already a nearly perfect balance between the voltage and current.…”
Section: Photonic Aspects Of Detailed Balancementioning
confidence: 99%