“…Besides light trapping, for semiconductor materials with fast radiative recombination rates [high internal quantum efficiencies (QEs)], such as GaAs, photon recycling by means of highly reflective back electrodes and controlling interference effects within the active layer have enabled record single-junction solar cell PCEs. 26,142,143 With the development of thin-film optoelectronic devices that have active layer thicknesses below the diffraction limit (i.e., < ∼300 nm); such as small molecule and polymeric OPVs in which the active light harvesting layer thickness ranges from ∼10 to 40 nm and up to ∼250 nm, respectively, light-management techniques using nanophotonic structures, particularly metallic plasmonic structures, have emerged. [144][145][146][147][148][149][150][151][152][153][154][155][156] Metal nanoparticles and structured metallic thin films can localize incident light to subwavelength dimensions due to the excitation of surface plasmons-collective electron oscillations of the free electrons at the surface of metals.…”