The effect of oxygen on the properties of transparent conducting Cu–Al–O thin films deposited by rf magnetron sputtering

Influence of working gas pressure on structure and properties of CuAlO2 films

“…It is reported that ionized interstitial oxygen could be the origin of the positive holes in the CuAlO 2 [1], excess oxygen leads to the improvement of p-type conductivity of CuAlO 2 films. The modulation of oxygen concentration is accomplished by changing oxygen partial pressure [17] or the post-deposition heattreatment [27,30]. For example, Yanagi et al reported an improvement of two orders of magnitude in the hole concentration after performing post-deposition oxygen annealing [27].…”

“…Among them, the radio frequency (RF) magnetron sputtering technique shows especially superiority in the large-area deposition techniques and is able to compatible with current microelectronics. Furthermore, the physical properties of sputtered CuAlO 2 thin films are dominated by deposition parameters, such as substrate temperature [16] and oxygen partial pressure [17][18][19]. However, there are scarcely any reports about another important parameter: working gas pressure (P W ), which mianly influences the reactivity, mobility and bombardment of the sputtered atoms during the sputtering process.…”

Effects of Mg substitution on the structural, optical, and electrical properties of CuAlO2 thin films

“…Since then, many attempts have been made to grow CuAlO 2 thin films with high performance (high conductivity and high transparency). Various production methods, such as pulsed laser deposition (PLD) [6], RF magnetron sputtering [7], chemical vapor deposition [8,9], spray pyrolysis [10,11], and sol-gel processes [12][13][14], among others, have been reported. Unfortunately, some difficulties, including high crystallization temperatures, secondary phase introductions, low transmittance, and low conductivity were encountered with these techniques.…”

Effects of citric acid on properties of single phase CuAlO2 thin films derived by chemical solution deposition

“…The discovery of p-type TCO film makes it possible to fabricate transparent oxide optoelectronic devices. After that, there are a number of reports on the growth of CuAlO 2 films prepared by pulsed laser deposition (PLD) [8], RF magnetron sputtering [9], chemical vapor deposition (CVD) [10], spray pyrolysis [11] and sol-gel process [12]. However, it simultaneously encounters some difficulties, such as high crystallization temperature, secondary phase introduction, low transmittance and low conductivity.…”