The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film

Wang, C.Y.; Ma, Shenglin; Li, F.M.; Chen, Y.; Xu, Xiaohui; Wang, T.; Yang, Fengxia; Zhao, Qiang; Liu, J.; Zhang, X.L.; Li, X.B.; Yang, Xiaohong; Zhu, Jing

doi:10.1016/j.mssp.2013.08.010

Cited by 27 publications

(9 citation statements)

References 19 publications

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“…As it can be appreciated, when Al 2 O 3 powder was incorporated in the mixture, a shift of the (101) peak position to lower 2-theta value, smaller nanoparticle size, higher lattice distortion and a wider FHWM were observed. Those phenomena may be related with the elongation suffered in the crystal structure due to the incorporation of Al 3+ with higher ionic radii than Mg 2+ ; and also by the introduction of the important amount of MgO of 10 wt % and formation of ZnMgO phase that could lead to an increase of defects and disorder into the ZnO lattice [23,24].…”

Section: Structural Properties Of the Zno-mgo:al 2 O 3 (10:2 Wt %) Tamentioning

confidence: 99%

“…This explains the tendency of a change in the grain orientation towards an ordered structure at those deposition conditions. Several studies about Mg and Al co-doping ZnO thin films fabricated by RF magnetron sputtering consider the (100) direction as the preferred orientation [24], but a All AMZO thin films presented hexagonal wurtzite structure with (101) as a preferred orientation. However, the increase of the sputtering pressure evolved the polycrystalline structure of ZnO.…”

Section: Structural Properties Of Amzo Thin Filmsmentioning

confidence: 99%

“…This explains the tendency of a change in the grain orientation towards an ordered structure at those deposition conditions. Several studies about Mg and Al co-doping ZnO thin films fabricated by RF magnetron sputtering consider the (100) direction as the preferred orientation [24], but a change can occur due to the large density of target impurities [25]. In addition, a small extra (200) peak related to MgO phase was observed.…”

Section: Structural Properties Of Amzo Thin Filmsmentioning

confidence: 99%

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Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

et al. 2020

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In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

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Section: Structural Properties Of the Zno-mgo:al 2 O 3 (10:2 Wt %) Tamentioning

confidence: 99%

Section: Structural Properties Of Amzo Thin Filmsmentioning

confidence: 99%

“…This explains the tendency of a change in the grain orientation towards an ordered structure at those deposition conditions. Several studies about Mg and Al co-doping ZnO thin films fabricated by RF magnetron sputtering consider the (100) direction as the preferred orientation [24], but a change can occur due to the large density of target impurities [25]. In addition, a small extra (200) peak related to MgO phase was observed.…”

Section: Structural Properties Of Amzo Thin Filmsmentioning

confidence: 99%

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Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

et al. 2020

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“…For the further improvement of its optoelectronic properties, the doped counterparts became an interest of many scientists. Generally, Al and Ga doped zinc oxides possess excellent thermal or chemical stability as compared to that of much more common ITO [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of Cd precursor on structure and optical properties of spin coated Zn_0:9Cd_0:1O films for optoelectronics applications

Arora

Kumar

Sathiaraj

2020

Materials Science-Poland

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The development of transparent conducting oxide materials has gained an increased interest in the scientific community for developing efficient low cost optoelectronic devices. The effect of Cd precursor on structural and optical properties of sol-gel synthesized Zn0.9Cd0.1O nanostructured films has been studied by using XRD, AFM, optical absorption and emission spectroscopic techniques. X-ray diffraction confirms the hexagonal wurtzite crystal structure of the deposited films and the relative intensity of diffraction peaks has been observed with different cadmium salts. The granular surface morphology of the synthesized films has been observed from AFM measurements. The optical transmission, band gap and luminescence intensity was found to change for different cadmium salts. These results are very important for developing new materials for optoelectronic applications.

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“…While the shapes and sizes of metallic targets are unlimited and are easier industrial implemented to alleviate this concern. Although Mg-doped AZO films deposited by sputtering using MgO and AZO ceramic targets have been widely studied [14,[16][17][18], little information is available on the film prepared by reactive sputtering using metallic targets of Mg and Al-Zn. The results of this study may provide a useful reference for researchers attempting to fabricate the film for applications.…”

Section: Introductionmentioning

confidence: 99%

Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

Yang

Jung

et al. 2020

Coatings

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Bandgap enlarged Mg-doped aluminum zinc oxide (Mg-doped AZO) film is a potential transparent conducting oxide for applications in photonics devices. The oxide film normally deposited by sputtering, particularly using ceramic targets, while maintaining its pristine property for the film deposited using metallic targets is rarely addressed. This study investigated the optical and electrical properties of Mg-doped AZO films that were performed by a magnetron reactive co-sputtering method using metallic Mg and Al–Zn targets. Doping of Mg in the AZO significantly affects the electrical resistivity and optical transmission of the films because Mg tends to replace part of Zn lattice sites. The 1.2 at.% Mg-doped AZO film had an electrical resistivity of 7.9 × 10−4 Ω·cm, an optical transmittance of 92.6% in the visible light range, and a bandgap of 3.66 eV when the film was post-annealed at 600 °C. The Mg doping widens the bandgap and, thus, increases the transmittance of the AZO film. Because of the superior electrical and optical characteristics, the Mg-doped AZO films prepared using the metallic targets can be a reliable transparent conducting oxide for applications.

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The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film

Cited by 27 publications

References 19 publications

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Effect of Cd precursor on structure and optical properties of spin coated Zn_0:9Cd_0:1O films for optoelectronics applications

Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

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The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film

Cited by 27 publications

References 19 publications

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Effect of Cd precursor on structure and optical properties of spin coated Zn0:9Cd0:1O films for optoelectronics applications

Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

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Effect of Cd precursor on structure and optical properties of spin coated Zn_0:9Cd_0:1O films for optoelectronics applications