The effect of ion induced damage on IBIC images

Breese, M.B.H.; Grime, G.W.; Dellith, M.

doi:10.1016/0168-583x(93)95562-j

Cited by 26 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The effects of ion induced damage on IBIC images from devices and dislocations were recognized early [39]. A means of minimizing its effects is to collect IBIC data in 'list-mode' [40,41], where it can be subsequently sorted to show the charge pulse height as a function of fluence in order to determine if beam damage is present.…”

Section: Beam Induced Damage In Ibicmentioning

confidence: 99%

A review of ion beam induced charge microscopy

Breese

Vittone²,

Vizkelethy

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

100

View full text Add to dashboard Cite

Section: Beam Induced Damage In Ibicmentioning

confidence: 99%

A review of ion beam induced charge microscopy

Breese

Vittone²,

Vizkelethy

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

100

View full text Add to dashboard Cite

“…35 DLTS is typically used to characterize the defect energy levels throughout an irradiated volume, with no depth resolution of the defect distribution, whereas C-V and spreading resistance measurements can provide depth-resolved information on the doping/resistivity profile. Microscopy techniques such as electron beam induced current (EBIC) 36 and ion beam induced charge (IBIC) microscopy 37,38 can image radiation-damaged areas in plan view and in cross-section by recording the reduced collected charge.…”

Section: Discussionmentioning

confidence: 99%

Depth-Resolved Imaging of Radiation-Induced Doping Changes in Silicon

Dang

Breese

2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

We present a method for imaging variations in the doping depth profile in n-and p-type silicon induced by high energy ion irradiation. This doping microscopy method is based on electrochemical anodization of irradiated wafers, producing porous silicon with a local porosity depending on doping changes. In moderately-doped n-type silicon a higher porosity corresponds to where irradiation creates excess donors and a lower porosity corresponds to where acceptors are created. Higher porosity regions may be selectively removed and so observed in cross-section images. We compare the effects of proton and helium ion irradiation on the localized doping in n-type Czochralski silicon, with and without annealing at 300 • C. Even at such a low annealing temperature, a pronounced n + doping is observed for helium irradiation, highly confined to just the irradiated volume. In comparison, proton irradiation results in weaker n + doping which extends beyond the irradiated region, attributed to hydrogen diffusion.

show abstract

“…This was done by feeding the predefined pattern into the software Ionscan [21], which was used to control the scanning of the beam. Damage mechanism and its effects on the resistivity of the silicon are described in [15], based on earlier observations of MeV ion induced damage for Ion Beam Induced Charge Microscopy [22,23]. The dose at each region is determined by the amount of time the beam accumulates at the particular region, so by pausing the beam for different times at different regions, any pattern of localized damage can be built up.…”

Section: Introductionmentioning

confidence: 99%