A review of ion beam induced charge microscopy

Breese, M.B.H.; Vittone, E.; Vizkelethy, György; Sellin, P.J.

doi:10.1016/j.nimb.2007.09.031

Cited by 100 publications

(64 citation statements)

References 117 publications

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“…Secondly, the carriers lifetimes, which are significantly shorter than in average traditional materials such as CZT, germanium, silicon, enable a full investigation in the effects of carriers recombination in the bulk on the formation of anomalous polarity pulses without the request of ad hoc constraints on the charge collection geometry associated with irradiation, inhomogeneous trap distribution or charge accumulation at the oxide. Thus, the study of the bulk recombination processes in diamond enables us to adopt and validate a general model based on a purely electrostatic approach and relying on the Shockley-Ramo-Gunn (SRGT) theorem [16,17]. The generality of the latter will allow a straightforward application to multi-electrode devices in any detector material, and a further corroboration of results in [1,8,9].…”

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confidence: 91%

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Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Forneris¹,

Grilj

Jakšić

et al. 2013

EPL

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-In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers' transport properties of the device. The resulting chargesharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multielectrode devices and detectors.

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confidence: 91%

“…The experimental measurements were carried out with the Ion Beam Induced Charge (IBIC) technique, which allowed the microscopic mapping of the induced pulse height as a function of the excess charge-carriers generation position across the device [16].…”

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confidence: 99%

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Forneris¹,

Grilj

Jakšić

et al. 2013

EPL

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“…Devices from the same lot were tested using the Heavy Ion Microbeam at Sandia National Laboratories [47] using a 48 MeV silicon ion beam, with LET of 10 MeV · cm 2 /mg (GaN) [45], and an elliptical spot-size where full-width at half-max (FWHM)(x) = 1 µm and FWHM(y) = 2.4 µm.…”

Section: Iv21 Experimental Setupmentioning

confidence: 99%

“…After exiting the Van de Graaff tandem accelerator, the beam is scanned in the x and y directions over the surface of the device electrostatically [47]. In the case of the Schottky gate device, the substrate is monitored by the scope via conductive epoxy on the backside of the die to capture any substrate transients.…”

Section: Iv21 Experimental Setupmentioning

confidence: 99%

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Samsel

Zhang

Hooten

et al. 2013

IEEE Trans. Nucl. Sci.

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“…Ion beam induced charge (IBIC) imaging [13] measurements were carried out to evaluate the CCE as a function of the spatial position across the detectors. For IBIC measurements the microprobe beam line at the Australian Nuclear Science and Technology Organisation was used to focus 5.5 MeV 4 He 2+ beams produced by the ANTARES accelerator down to ∼ 1 µm diameter.…”

Section: -P2 4 Spatially Resolved Charge Collection Efficiency mentioning

confidence: 99%

Charge transport properties of CdMnTe radiation detectors

Rafiei

Boardman

Reinhard

et al. 2012

EPJ Web of Conferences

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Abstract. Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be µ n = (718 ± 55) cm 2 /Vs at room temperature.

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A review of ion beam induced charge microscopy

Cited by 100 publications

References 117 publications

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Charge transport properties of CdMnTe radiation detectors

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