2020
DOI: 10.1080/00150193.2020.1811031
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The effect of indium oxide (In2O3) dopant on the electrical properties of LiTaO3 thin film-based sensor

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Cited by 4 publications
(2 citation statements)
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“…However, considering the unique energy collection characteristics of the piezoelectric materials, they have very important advantages in the development of fast dynamic response, low energy consumption, and selfpowered flexible tactile sensors. The piezoelectric materials commonly used in piezoelectric sensors include lead zirconate titanate (PZT) [52][53][54][55][56] , ZnO [57] , BaTiO 3 [58] , LiTaO 3 [59,60] , Group III-nitride (III-N) materials (AlN and GaN) [61][62][63] , and intrinsic flexible polyvinylidene fluoride (PVDF) [64][65][66] .…”
Section: Piezoelectric Mechanismmentioning
confidence: 99%
“…However, considering the unique energy collection characteristics of the piezoelectric materials, they have very important advantages in the development of fast dynamic response, low energy consumption, and selfpowered flexible tactile sensors. The piezoelectric materials commonly used in piezoelectric sensors include lead zirconate titanate (PZT) [52][53][54][55][56] , ZnO [57] , BaTiO 3 [58] , LiTaO 3 [59,60] , Group III-nitride (III-N) materials (AlN and GaN) [61][62][63] , and intrinsic flexible polyvinylidene fluoride (PVDF) [64][65][66] .…”
Section: Piezoelectric Mechanismmentioning
confidence: 99%
“…To obtain high-quality semiconductor devices, the "purity" and "single crystal perfection" of the semiconductor must be considered [18]. This is because, in general, the addition of a small number of impurities affects the charge carrier, thus affecting the components being made [19].…”
Section: Introduction mentioning
confidence: 99%