2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) 2019
DOI: 10.1109/rsm46715.2019.8943521
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The Effect of Illumination Intensity on the Performance of Germanium Based-Thermophotovoltaic Cell

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Cited by 8 publications
(3 citation statements)
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“… Ref Material T rad T cell (K) (μm) (eV) V oc (V) I sc (A) (A/cm 2 ) FF (%) (%) Exp./ Sim. [ 194 ] Ge AM 0 300 1.9 0.66 n/a n/a n/a n/a 13 Exp [ 195 ] Ge 2000 K (3.66–36.6 W/cm 2 ) 300 n/a 0.664 0.323–0.383 5 × 10 −7 –5.1 × 10 −6 n/a 73.4–76.4 9.6–11.9 Sim [ 196 ] Ge AM1.5 × 25 sun ...…”
Section: Narrow Bandgap Materials For Tpvmentioning
confidence: 99%
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“… Ref Material T rad T cell (K) (μm) (eV) V oc (V) I sc (A) (A/cm 2 ) FF (%) (%) Exp./ Sim. [ 194 ] Ge AM 0 300 1.9 0.66 n/a n/a n/a n/a 13 Exp [ 195 ] Ge 2000 K (3.66–36.6 W/cm 2 ) 300 n/a 0.664 0.323–0.383 5 × 10 −7 –5.1 × 10 −6 n/a 73.4–76.4 9.6–11.9 Sim [ 196 ] Ge AM1.5 × 25 sun ...…”
Section: Narrow Bandgap Materials For Tpvmentioning
confidence: 99%
“… Record TPV cell efficiencies for various materials Ge [ 195 ], GaSb [ 3 , 131 , 134 ], InAs [ 204 ], InGaAs [ 52 , 103 , 159 , 163 , 185 , 186 ], InAsSb [ 205 ], InGaSb [ 200 ], InGaAsSb [ 63 , 198 , 199 ] and cascade InAs/GaSb/AlSb [ 201 ]. …”
Section: Narrow Bandgap Materials For Tpvmentioning
confidence: 99%
“…Several studies have highlighted the performance of Ge and InGaAs cells under various illumination concentrations [20]- [22], blackbody temperatures [23]- [25] and gap distances [15]. Typically, the TPV cells are employed under a wide range of spectral irradiances and operate at various illumination intensities.…”
Section: Introductionmentioning
confidence: 99%