The effect of high fields on MOS device and circuit performance

Sodini, C.G.; Ko, P.K.; Moll, J.L.

doi:10.1109/t-ed.1984.21721

Cited by 278 publications

(64 citation statements)

References 19 publications

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“…For deep submicron MOSFETs velocity saturation at sufficiently large lateral fields creates a serious limitation of the device performance [6], [7]. In that case, the saturation drain current becomes linearly dependent on the gate overdrive voltage, instead of quadratic and can be approximated by 163:…”

Section: Velocity Saturation and Overshootmentioning

confidence: 99%

“…This is the more true for low temperature operation, which can increase the mobility degradation and the series resistance [5]. At the same time, high transverse and high lateral field effects become important [6] and carrier velocity saturation starts to limit the drive current [7]-[g]. At cryogenic temperatures andlor for sub 100 nm devices, even velocity overshoot has been demonstrated experimentally [9]-[Ill.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

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Abstract. In this paper, an overview is given of the methods for practical parameter extraction for MOSFETs operated at cryogenic temperatures. The methods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate length is derived. Whenever possible, the physical basis of the mostly semi-empirical methods will be outlined. Finally, pitfalls and problems, related to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.

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Section: Velocity Saturation and Overshootmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

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“…Assuming source is grounded, the drain current I D at the onset of velocity saturation can be modeled as [7]:…”

Section: Operation Under Velocity Saturationmentioning

confidence: 99%

Low Fixed Pattern Noise Current-mode Imager Using Velocity Saturated Readout Transistors

Yang

Gruev

Spiegel

2007

2007 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper described a novel current-mode active pixel sensor (APS) imager. Conversion of photodiode voltage to output current is done using transistors operating in velocity saturation region. The high output impedance of this region makes it more suitable for current-sourcing operation than the linear region. The transistors also exhibit high linearity, allowing us to suppress fixed pattern noise (FPN) by correcting for both offset and gain variations among pixels. Experimental results on the fabricated 110×200 pixel array are presented. With conventional correlated double sampling (CDS), FPN is reduced from 3.8% to 0.85%. Further reduction requires compensation of gain variations, and results in a final FPN of 0.19%. A triple sampling approach is introduced to implement the described correction in hardware.

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“…Device performance is modeled using compact low-voltage Transregional MOSFET models [11,12] ( Figs 7,8,9) that predict circuit performance in the sub-threshold, saturation and linear regions of operation providing continuous and smooth transitions across region boundaries. High fieldeffects on carrier mobility are incorporated by adopting the mobility reduction model in [13]. Smoothness and continuity of the drain current expressions in the triode, saturation and the subthreshold regions are obtained by requiring differentiability and continuity of the product of the effective mobility and the areal charge density of inversion layer carriers.…”

Section: Circuit and Device Modelsmentioning

confidence: 99%