2007 IEEE International Symposium on Circuits and Systems (ISCAS) 2007
DOI: 10.1109/iscas.2007.378764
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Low Fixed Pattern Noise Current-mode Imager Using Velocity Saturated Readout Transistors

Abstract: This paper described a novel current-mode active pixel sensor (APS) imager. Conversion of photodiode voltage to output current is done using transistors operating in velocity saturation region. The high output impedance of this region makes it more suitable for current-sourcing operation than the linear region. The transistors also exhibit high linearity, allowing us to suppress fixed pattern noise (FPN) by correcting for both offset and gain variations among pixels. Experimental results on the fabricated 110×… Show more

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Cited by 16 publications
(9 citation statements)
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“…Ideally, V re f and V pre have the same value. A large value is chosen, so that the readout transistor (M5) can be biased in velocity saturation [6]. The ADC is designed to operate at 10ns/bit and generate 11-bit digital output (10-bit effective after digital calibration).…”
Section: A Configurationmentioning
confidence: 99%
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“…Ideally, V re f and V pre have the same value. A large value is chosen, so that the readout transistor (M5) can be biased in velocity saturation [6]. The ADC is designed to operate at 10ns/bit and generate 11-bit digital output (10-bit effective after digital calibration).…”
Section: A Configurationmentioning
confidence: 99%
“…3 shows a detailed timing diagram for reading out all PD1's in a column of pixel groups. It is assumed that FPN correction is done offline in order to achieve maximum frame rate; although on-chip hardware TS can also be implemented [6]. Under this assumption, only the signal levels at the end of integration needs to be read out.…”
Section: B Operationmentioning
confidence: 99%
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“…However, of the readout transistor is still not constant, and the mismatch between the column switches reduces the precision. Others [2,6] proposed improving the linearity by biasing the readout transistor in velocity saturation region. Thus, a very short channel device and a higher drain to source voltage are required, which are limited by the CMOS processing technology.…”
Section: Introductionmentioning
confidence: 99%