The effect of growth temperature and metal-to-chalcogen on the growth of WSe2 by molecular beam epitaxy

Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides

“…Another noteworthy observation from the normalized W 4f spectra is the emergence of a sub-stoichiometric (WSe 2-x ) state after the 800 °C anneal. This state is seen as an asymmetry at the low binding energy side for the 800 °C curve, which has also been observed for MBE growths of WSe 2 using low Se:W flux ratios [55]. The spectral deconvolution of the post-800 °C anneal W 4f spectrum is shown in Fig.…”

Superior Quality Low-Temperature Growth of Three-Dimensional Semiconductors Using Intermediate Two-Dimensional Layers

“…The transition indicates that a larger grain size of the WSe 2 is obtained for higher growth temperature. The WSe 2 retains the same phase since the line shape is not changed in the XPS measurements 39 in Figure 4e. Figure 4f shows This leads to the following model for understanding the growth quality improvement using 2D intermediate layers.…”

“…The transition indicates that a larger grain size of the WSe 2 is obtained for higher growth temperature. The WSe 2 retains the same phase since the line shape is not changed in the XPS measurements in Figure e. Figure f shows the fwhm of the XRD θ–2θ scans of the ZnSe overlayers (all grown at 250 °C) as a function of WSe 2 layer growth temperatures.…”

van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward

“…Thus, there still exists plenty of room for the enhancement of the crystal quality of these thin films by utilizing appropriate substrates for their growth and by further correlating the unexplored or much less explored growth parameters, for instance, the beam flux of the sources, annealing time, growth temperature, etc. 86,111,115–117…”

“…Thus, there still exists plenty of room for the enhancement of the crystal quality of these thin films by utilizing appropriate substrates for their growth and by further correlating the unexplored or much less explored growth parameters, for instance, the beam flux of the sources, annealing time, growth temperature, etc. 86,111,[115][116][117] To date, most of the research in this field is limited to the growth of TMDC thin films and heterostructures. It is high time that focus needs to be given to fabricating MBE-grown TMDC-based devices, which can be promising in various applications such as photodetection, gas sensing, thermoelectrics, photocatalysis, energy generation, photovoltaics, etc.…”