Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides

Sales, Maria Gabriela; Jaszewski, Samantha T.; Fields, Shelby S.; Litwin, Peter M.; Ihlefeld, Jon F.; McDonnell, Stephen

doi:10.1016/j.apsusc.2021.149058

Cited by 6 publications

(6 citation statements)

References 67 publications

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“…500 • C in UHV for ∼3 h, allow crystallization of the as-deposited amorphous HZO films. We note that prior to this 3 h 500 • C anneal, the HZO substrates were amorphous and would not have produced a diffraction pattern, as previously shown [47]. After annealing, a mixed phase assemblage composed of the monoclinic, orthorhombic, and tetragonal phases of HZO is observed through XRD, as shown in figure 4.…”

Section: Impact Of the Mbe Growth Conditionsmentioning

confidence: 64%

“…Direct integration of dielectric oxides on TMDCs has been previously demonstrated through atomic layer deposition (ALD) directly on van der Waals surfaces, and a relatively sharp interface between the two materials with no intermixing of constituents has been shown [41][42][43][44][45][46]. Furthermore, the thermal stability of the interface of ALD HZO on MoS 2 and WSe 2 has been shown up to 700 • C [47]. Our present work is focused on the reverse structure-TMDCon-HZO.…”

Section: Introductionmentioning

confidence: 91%

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WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

Sales¹,

Fields²,

Jaszewski³

et al. 2021

2D Mater.

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Direct integration of transition metal dichalcogenides on a ferroelectric such as hafnium zirconium oxide (HZO) using an industrially scalable technique is important for realizing various ferroelectric-based device architectures. The interface formed due to the processing conditions during direct deposition is the focus of the current study. In this work, molecular beam epitaxy (MBE) is used to directly deposit WSe 2 on HZO substrates, and the effects of the MBE growth conditions, specifically high temperature and a high Se flux, are examined. Anneals of HZO under a Se flux, which serve to replicate the conditions during actual WSe 2 deposition, result in the crystallization of amorphous as-deposited HZO substrates and incorporation of Se into the HZO. The crystallinity and composition of the HZO substrates affect the degree of Se incorporation. Some of the Se found in the HZO is an adsorbed layer that can be thermally desorbed, but it also has a chemisorbed component fully incorporated within the HZO lattice. Measurement of the electrical properties of the HZO films did not provide evidence that the incorporated Se was detrimental to the functionality of the HZO as a ferroelectric layer.

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Section: Impact Of the Mbe Growth Conditionsmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 91%

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

Sales¹,

Fields²,

Jaszewski³

et al. 2021

2D Mater.

Self Cite

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“…Thus, the issue of surface oxidation needs to be solved and therefore, the study of the oxidation kinetics of the MBE-grown TMDCs can be an exciting area of investigation. 129,130…”

Section: Discussionmentioning

confidence: 99%

“…Thus, the issue of surface oxidation needs to be solved, and therefore, the study of the oxidation kinetics of the MBE-grown TMDCs can be an exciting area of investigation. 129,130 As a concluding remark, MBE has emerged as a promising growth technique for large-scale TMDC thin films, and hence, holds the potential for use in next-generation device applications.…”

Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%

van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward

Singh

Gupta

2022

Mater. Adv.

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“…Heterojunctions, which are formed by the close contact of two dissimilar semiconductors, that is, a discontinuity in the local band structure at the interface, are of great importance in the field of optoelectronic devices owing to their superior charge-transport properties. , Heterojunctions can be classified into isotypes (p–p or n–n) when both sides have the same conductive type and anisotypes (p–n) when both sides have different conductive types. Anisotype heterojunctions are at the heart of most semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Photoelectric Characteristics of Isotype Heterostructure p-WSe₂/p-Si Photodetector with Improved Photoresponsivity and Detectivity

Singiri,

Shin,

et al. 2023

ACS Appl. Electron. Mater.

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A heterojunction photodetector was fabricated for the first time via chemical vapor deposition by combining a p-type WSe2 monolayered triangular flake with a p-type Si substrate. Under illumination, the p–p isotype heterojunction exhibited a broad photoresponse range of 400–1550 nm under LED and laser light. The introduction of monotriangular and atomic thick p-WSe2 flakes onto p-type Si greatly increased the photodetection capability with a long carrier lifetime and robust light absorption. The best performance of this device exhibited a minimized dark current of 5 nA, a record high photocurrent-to-dark-current ratio of ∼28111.88, an ultrahigh detectivity of 2.075 × 1015 jones, a high external quantum efficiency (EQE) of 133132%, and a high responsivity of 568.6 A/W under light illumination of 532 nm with 9.17 mW/cm2 intensity. These engrossing results indicate that this p-WSe2/p-Si heterojunction device has considerable potential for applications in next-generation photodetectors.

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Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides

Cited by 6 publications

References 67 publications

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward

Photoelectric Characteristics of Isotype Heterostructure p-WSe₂/p-Si Photodetector with Improved Photoresponsivity and Detectivity

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Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides

Cited by 6 publications

References 67 publications

WSe2 growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe2 growth conditions on the ferroelectric properties of HZO

WSe2 growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe2 growth conditions on the ferroelectric properties of HZO

van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward

Photoelectric Characteristics of Isotype Heterostructure p-WSe2/p-Si Photodetector with Improved Photoresponsivity and Detectivity

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Product

Resources

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WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

Photoelectric Characteristics of Isotype Heterostructure p-WSe₂/p-Si Photodetector with Improved Photoresponsivity and Detectivity