The effect of graphite components and crucible coating on the behaviour of carbon and oxygen in multicrystalline silicon

Raabe, Lutz; Pätzold, O.; Kupka, I.; Ehrig, Jan; Würzner, Sindy; Stelter, Michael

doi:10.1016/j.jcrysgro.2010.11.142

Cited by 42 publications

(23 citation statements)

References 20 publications

(28 reference statements)

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“…Once the melting front reaches the top surface of the Si feedstock, the reactions (4), (5), and (6) can occur at the gas/melt interface. The distributions of SiO and CO in the gas domain during the melting stage are shown in figure 4(a).…”

Section: Transport Of the Species During The Melting Processmentioning

confidence: 99%

“…If transported to the growth zone, gaseous CO can decompose into C and O in the melt. Furthermore, CO also reacts with solid or molten Si and generates silicon carbide (SiC) as a byproduct [4][5][6]. SiC either dissolves into the melt as C contamination or incorporates into the growing crystal as solid SiC particles, causing dislocations and defects inside the crystal.…”

Section: Introductionmentioning

confidence: 99%

“…The greater concern, in particular, is that these reactions are generally triggered during the preheating and melting stages. It has been demonstrated experimentally [5] that the concentration of gaseous CO in a furnace chamber containing graphite components increases considerably during the melting process. Moreover, measurements of the C contents in the melt and in the resulting crystal have shown that contamination of the melt mostly occurs prior to the crystal growth stage [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Liu

Gao

Nakano

et al. 2015

Crystal Research and Technology

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Carbon contamination in single crystalline silicon is detrimental to the minority carrier lifetime, one of the critical parameters for electronic wafers. In order to study the generation and accumulation of carbon contamination, transient global modeling of heat and mass transport was performed for the melting process of the Czochralski silicon crystal growth. Carbon contamination, caused by the presence of carbon monoxide in argon gas and silicon carbide in the silicon feedstock, was predicted by the fully coupled chemical model; the model included six reactions taking place in the chamber. A simplified model for silicon carbide generation by the reaction between carbon monoxide and solid silicon was proposed using the closest packing assumption for the blocky silicon feedstock. The accumulation of carbon in the melted silicon feedstock during the melting and stabilization stages was predicted. Owing to this initial carbon content in the melt, controlling carbon contamination before the growth stage becomes crucial for reducing the carbon incorporation in a growing crystal.

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Section: Transport Of the Species During The Melting Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Liu

Gao

Nakano

et al. 2015

Crystal Research and Technology

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“…Multi-crystalline · Low production cost · High-capacity production · Reduction of efficiency by defect · Grain boundary control -Increase of 3 grain boundary density [3] -Application of crucible noncontact technology [9] -Increase of cooling temperature [10] · Impurity control -Reduction of atmospheric CO transport [11] -Disuse of graphite component [12] -Use of Si 3 N 4 coated crucible [13] Mono-like Si · Low production cost · High efficiency · Reduction of single crystal fraction by nucleation from side crucible · Hot zone design [16,17] -Insulator supplement and cooling increase at bottom · Seed orientation control [4] · Heat loss control -Installation of insulation partition at heat loss part [18] …”

Section: 산소 석출을 감소시키기 위해mentioning

confidence: 99%

The current status in the silicon crystal growth technology for solar cells

Lee¹,

Kim²

2014

Journal of the Korean Crystal Growth and Crystal Technology

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Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon is the main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystal interface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is the contamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. And also, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of the MCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner side crucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growing apparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as the optimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom of the crucible would be one of the solutions.

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“…These wafers are sliced from crystals grown either by the Czochralski (CZ) 3) crystal growth technique used in the microelectronics industry or from much larger ingots prepared by directional solidification (DS) 4) techniques that result in multicrystalline silicon.…”

Section: Introductionmentioning

confidence: 99%

Silicon bulk growth for solar cells: Science and technology

Kakimoto

Gao

Nakano

et al. 2017

Jpn. J. Appl. Phys.

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The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both singlecrystalline and multicrystalline wafers.

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The effect of graphite components and crucible coating on the behaviour of carbon and oxygen in multicrystalline silicon

Cited by 42 publications

References 20 publications

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

The current status in the silicon crystal growth technology for solar cells

Silicon bulk growth for solar cells: Science and technology

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