The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodes

Taşçıoğlu, İlke; Uslu, Habibe; Altındal, Ş.; Durmuş, Perihan; Dökme, İlbilge; Tunç, Turgay

doi:10.1002/app.32450

Cited by 21 publications

(13 citation statements)

References 40 publications

(62 reference statements)

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“…The magnitudes of these peaks decrease with increasing frequency. The frequency dependence of Rs is attributed to the particular distribution density of interface states [14,28,39]. The series resistance of all irradiated samples has increased .The increase of series resistance after radiation is attributed to the decrease of carriers' mobility and carriers' removal effect [40].…”

Section: Accepted Manuscriptmentioning

confidence: 90%

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Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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Section: Accepted Manuscriptmentioning

confidence: 90%

“…As grown samples have low leakage current compared to irradiated ones. Such increase has been attributed to the increase of generation recombination centers and image force barrier lowering [9,14]. Reverse leakage current also exhibits strong dependence on the N concentration.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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“…Over the last decade, various types of metal‐insulator‐semiconductor (MIS) structures have been investigated vastly by many researchers . Metal‐polymer‐semiconductor (MPS) structures are used as an alternative to conventional MIS structures.…”

Section: Introductionmentioning

confidence: 99%

“…Metal‐polymer‐semiconductor (MPS) structures are used as an alternative to conventional MIS structures. Main reason of using MPS structures is that having an organic interfacial layer between metal and semiconductor, rather than an inorganic one, leads to improvements in the electrical and dielectric properties of the structure . Also, the fact that MPS structures exhibit characteristics that are similar to those of MIS structures allows us to obtain the electrical characteristics of MPS structures the same way we obtain those of MIS structures.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, researchers used various polymers in their trial of reaching better structure characteristics. Among these polymers, polyvinyl alcohol (PVA) comes forward since it is a low cost material, which is easily processed even on flexible surfaces, it also diminishes the density of interface traps ( D it ) at the PVA/n‐Si thanks to better compatibility with n‐Si .…”

Section: Introductionmentioning

confidence: 99%

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Investigation of current‐voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide

Yıldırım

Gökçen

Tunç

et al. 2013

Polymer Engineering & Sci

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Temperature dependent current-voltage (I-V) measurements of Au/Polyvinyl Alcohol 1 Bi 2 O 3 /n-Si structure were conducted between 100 and 350 K for investigating the temperature dependence of I-V characteristics and current conduction mechanisms in the structure. Series resistance of the structure is calculated using Ohm's law and Cheungs' method. Ideality factor (n) and zero-bias barrier height (U Bo ) were obtained considering thermionic emission theory. From 100 to 350 K, n changed from 32.1 to 3.54, and U Bo changed from 0.27 to 0.99 eV. Obtained temperature dependent values of n and U Bo suggested that thermionic emission is not the dominant current conduction mechanism. Therefore, Ln(I)-Ln(V) curves of the studied structure were plotted for investigating current conduction mechanisms in the structure and current flow is explained considering space charge limited current. Moreover, density of interface states (D it ) in the structure were calculated and its temperature dependence was investigated such that D it values are reduced to the order of $10 13 eV 21 cm 22 from $10 14 eV 21 cm 22 with increasing temperature.

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The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodes

Uslu

Altındal

Tunç

et al. 2010

J of Applied Polymer Sci

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ABSTRACT:The Au/polyvinyl alcohol (PVA) (Co, Zndoped)/n-Si Schottky barrier diodes (SBDs) were exposed to various illumination intensities. Illumination effect on the dielectric properties has been investigated by using capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics at 1 MHz and room temperature. The values of dielectric constant (e 0 ), dielectric loss (e 00 ), loss tangent (tand), electric modulus (M 0 and M 00 ), and AC electrical conductivity (r AC ) were found strongly intensity dependent on both the illumination levels and applied bias voltage especially in depletion and accumulation regions. Such bias and illumination dependency of these parameters can be explained on the basis of Maxwell-Wagner interfacial polarization and restructuring and reordering of charges at interface states. In addition, the e 0 -V plots also show an intersection feature at $ 2.8 V and such behavior of the e 0 -V plots appears as an abnormality compared with the conventional behavior of an ideal SBD. The obtained results revealed that illumination intensity enhances the conductivity of Au/PVA(Co, Zndoped)/n-Si SBD.

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The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodes

Cited by 21 publications

References 40 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Investigation of current‐voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide

The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodes

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